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參數資料
| 型號： | 2SC4688-O |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | LEAD FREE, 2-16F1A, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 119K |
| 代理商： | 2SC4688-O |
2SC4688
2004-07-07
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC4688
Power Amplifier Applications
Complementary to 2SA1803
Suitable for use in 40-W high fidelity audio amplifier’s output stage
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
5
V
DC
IC
6
Collector current
Pulse
ICP
12
A
Base current
IB
0.6
A
Collector power dissipation
(Tc = 25°C)
PC
55
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 80 V, IE = 0
―
5.0
A
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
―
5.0
A
Collector-emitter breakdown voltage
V (BR) CEO
IC = 50 mA, IB = 0
80
―
V
hFE (1)
(Note)
VCE = 5 V, IC = 1 A
55
―
160
DC current gain
hFE (2)
VCE = 5 V, IC = 3 A
35
75
―
Collector-emitter saturation voltage
VCE (sat)
IC = 5 A, IB = 0.5 A
―
0.45
2.0
V
Base-emitter voltage
VBE
VCE = 5 V, IC = 3 A
―
0.92
1.5
V
Transition frequency
fT
VCE = 5 V, IC = 1 A
―
30
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
105
―
pF
Note: hFE (1) classification R: 55 to 110, O: 80 to 160
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-16F1A
Weight: 5.8 g (typ.)
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| 2SC4691GR | 100 mA, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC4693 | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC4688-O(F) | 制造商:Toshiba 功能描述:NPN 制造商:Toshiba America Electronic Components 功能描述:Tr.,NPN,80V/6A,hfe=80to160,TO-3P(N)IS |
| 2SC4688-R(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 80V 6A 3-Pin(3+Tab) TO-3P(N)IS |
| 2SC4689-O(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC4690-O(F) | 功能描述:兩極晶體管 - BJT Transistor NPN 140V 10A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC4690-R(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 140V 10A 3-Pin(3+Tab) TO-3P(N)IS |
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