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參數資料
型號: 2SC4688-O
元件分類: 功率晶體管
英文描述: 6 A, 80 V, NPN, Si, POWER TRANSISTOR
封裝: LEAD FREE, 2-16F1A, 3 PIN
文件頁數: 1/4頁
文件大?。?/td> 122K
代理商: 2SC4688-O
2SC4688
2006-11-10
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC4688
Power Amplifier Applications
Complementary to 2SA1803
Suitable for use in 40-W high fidelity audio amplifier’s output stage
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
5
V
DC
IC
6
Collector current
Pulse
ICP
12
A
Base current
IB
0.6
A
Collector power dissipation
(Tc = 25°C)
PC
55
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-16F1A
Weight: 5.8 g (typ.)
相關PDF資料
PDF描述
2SC4688-R 6 A, 80 V, NPN, Si, POWER TRANSISTOR
2SC4690-O 10 A, 140 V, NPN, Si, POWER TRANSISTOR
2SC4690-R 10 A, 140 V, NPN, Si, POWER TRANSISTOR
2SC4690 10 A, 140 V, NPN, Si, POWER TRANSISTOR
2SC4691R 100 mA, NPN, Si, SMALL SIGNAL TRANSISTOR
相關代理商/技術參數
參數描述
2SC4688-O(F) 制造商:Toshiba 功能描述:NPN 制造商:Toshiba America Electronic Components 功能描述:Tr.,NPN,80V/6A,hfe=80to160,TO-3P(N)IS
2SC4688-R(F) 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 80V 6A 3-Pin(3+Tab) TO-3P(N)IS
2SC4689-O(F) 制造商:Toshiba America Electronic Components 功能描述:
2SC4690-O(F) 功能描述:兩極晶體管 - BJT Transistor NPN 140V 10A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC4690-R(F) 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 140V 10A 3-Pin(3+Tab) TO-3P(N)IS
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