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參數(shù)資料
| 型號(hào)： | 2SC4713KT146 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | SMT3, SC-59, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 76K |
| 代理商： | 2SC4713KT146 |
2SC4774 / 2SC4713K
Transistors
Rev.B
1/2
High frequency amplifier transistor,
RF switching (6V, 50mA)
2SC4774 / 2SC4713K
Features
1) Very low output-on resistance (Ron).
2) Low capacitance.
Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
12
6
3
50
0.2
150
55 to +150
Unit
V
mA
W
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Packaging specifications and hFE
Type
2SC4774
UMT3
S
BM
T106
3000
2SC4713K
SMT3
S
BM
T146
3000
Denotes hFE
Package
hFE
Marking
Code
Basic ordering unit (pieces)
Dimensions (Unit : mm)
0.2
0.15
0.1Min.
0.9
0.7
1.25
2.1
0.3
(3)
0.65
(2)
2.0
1.3
(1)
0.65
(2)
(1)
2.8
1.6
0.4
(3)
2.9
1.9
0.95
0.8
0.15
0.3Min.
1.1
2SC4774
ROHM : UMT3
EIAJ : SC-70
ROHM : SMT3
EIAJ : SC-59
2SC4713K
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
12
6
3
270
300
800
1
0.5
0.3
560
1.7
V
A
V
MHz
pF
IC
=10A
IC
=1mA
IE
=10A
VCB
=10V
VEB
=2V
IC/IB
=10mA/1mA
VCE/IC
=5V/5mA
VCE
=5V, IE= 10mA, f=200MHz
VCB
=10V, IE=0A, f=1MHz
Ron
2
IB
=3mA, VI=100mVrms, f=500kHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Output-on resistance
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC4713KT146R | 功能描述:兩極晶體管 - BJT TRANS GP BJT NPN 6V 0.05A 3PIN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC4713KT146S | 功能描述:兩極晶體管 - BJT NPN 6V 50MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC4725TL | 制造商:ROHM Semiconductor 功能描述: |
| 2SC4725TLP | 功能描述:兩極晶體管 - BJT NPN 20V 50MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC4726 | 制造商:ROHM Semiconductor 功能描述:Bipolar Junction Transistor, NPN Type, SOT-23VAR |
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