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參數資料
型號: 2SC4754
元件分類: 功率晶體管
英文描述: 2 A, 400 V, NPN, Si, POWER TRANSISTOR
封裝: LEAD FREE, 2-10S1A, 3 PIN
文件頁數: 1/5頁
文件大小: 190K
代理商: 2SC4754
2SC4754
2006-11-10
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC4754
High-Voltage Switching Applications
High-Speed DC-DC Converter and Switching Regulator
Applications
Excellent switching times: tr = 1.0 s (max)
tf = 1.0 s (max), (IC = 0.8 A)
High breakdown voltage: VCEO = 400 V
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
600
V
Collector-emitter voltage
VCEO
400
V
Emitter-base voltage
VEBO
7
V
Collector current
IC
2
A
Base current
IB
0.5
A
Ta = 25°C
1.5
Collector power
dissipation
Tc = 25°C
PC
20
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-10S1A
Weight: 1.5 g (typ.)
相關PDF資料
PDF描述
2SC4764 6 A, 600 V, NPN, Si, POWER TRANSISTOR
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相關代理商/技術參數
參數描述
2SC4754(Q) 制造商:Toshiba America Electronic Components 功能描述:
2SC4774 T106S 制造商:ROHM Semiconductor 功能描述:
2SC4774T106 制造商:ROHM Semiconductor 功能描述:
2SC4774T106R 制造商:ROHM Semiconductor 功能描述:TRANSISTOR 2SC4774T106R
2SC4774T106S 功能描述:兩極晶體管 - BJT NPN 6V 50MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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