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參數資料
型號: 2SC4774
廠商: Rohm CO.,LTD.
英文描述: High frequency amplifier transistor RF switching (6V, 50mA)
中文描述: 高頻射頻開關(6V的,50mA的放大器晶體管)
文件頁數: 1/3頁
文件大小: 70K
代理商: 2SC4774
2SC4774 / 2SC4713K
Transistors
High frequency amplifier transistor,
RF switching (6V, 50mA)
2SC4774 / 2SC4713K
z
Features
1) Very low output-on resistance (Ron).
2) Low capacitance.
z
Absolute maximum ratings
(Ta=25
°
C)
Rev.A
1/2
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
12
6
3
50
0.2
150
55 to
+
150
Unit
V
V
V
mA
W
°
C
°
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
z
Packaging specifications and h
FE
Type
Package
h
FE
Marking
Code
2SC4774
UMT3
S
BM
T106
3000
2SC4713K
SMT3
S
BM
T146
3000
Denot
es h
FE
Basic ordering unit (pieces)
z
External dimensions
(Unit : mm)
z
Electrical characteristics
(Ta=25
°
C)
2SC4774
ROHM : UMT3
EIAJ : SC-70
ROHM : SMT3
EIAJ : SC-59
2SC4713K
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
1.25
2.1
0
0
0
0.1Min.
(
0
0
0
0
(
2
1
(
0
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
0
0
0
0.3Min.
1
(
(
2.8
1.6
0
(
2
1
0
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Ron
Min.
12
6
3
270
300
Typ.
800
1
2
Max.
0.5
0.5
0.3
560
1.7
Unit
V
V
V
μ
A
μ
A
V
MHz
pF
Conditions
I
C
=
10
μ
A
I
C
=
1mA
I
E
=
10
μ
A
V
CB
=
10V
V
EB
=
2V
I
C
/I
B
=
10mA/1mA
V
CE
/I
C
=
5V/5mA
V
CE
=
5V, I
E
=
10mA, f
=
200MHz
V
CB
=
10V, I
E
=
0A, f
=
1MHz
I
B
=
3mA, V
I
=
100mVrms, f
=
500kHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Output-on resistance
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相關代理商/技術參數
參數描述
2SC4774 T106S 制造商:ROHM Semiconductor 功能描述:
2SC4774T106 制造商:ROHM Semiconductor 功能描述:
2SC4774T106R 制造商:ROHM Semiconductor 功能描述:TRANSISTOR 2SC4774T106R
2SC4774T106S 功能描述:兩極晶體管 - BJT NPN 6V 50MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC4779S 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SPT50V .1A .3W ECB
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