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參數(shù)資料
| 型號： | 2SC4809 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation/mixing) |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | SSMINI3-G1, SC-75, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 36K |
| 代理商： | 2SC4809 |
1
Transistor
2SC4809
Silicon NPN epitaxial planer type
For high-frequency amplification/oscillation/mixing
I
Features
G
High transition frequency f
T
.
G
Small collector output capacitance C
ob
and common base reverse
transfer capacitance C
rb
.
G
SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter
3:Collector
EIAJ:SC–75
SS–Mini Type Package
1.6
±
0.15
1
±
0
1
±
0
0
±
0
0
±
0
0
0
0
0
0.8
±
0.1
0.4
0.4
0
+
–
0
+
–
1
2
3
0.2
±
0.1
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
15
10
3
50
125
125
–55 ~ +125
Unit
V
V
V
mA
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Base time constant
Common emitter reverse transfer capacitance
h
FE
ratio
Symbol
I
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
r
bb
' · C
C
C
rb
Conditions
V
CB
= 10V, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 4V, I
C
= 5mA
I
C
= 20mA, I
B
= 4mA
V
CB
= 4V, I
E
= –5mA, f = 200MHz
V
CB
= 4V, I
E
= 0, f = 1MHz
V
CB
= 4V, I
E
= –5mA, f = 31.9MHz
V
CB
= 4V, I
E
= 0, f = 1MHz
V
CE
= 4V, I
C
= 100
μ
A
V
CE
= 4V, I
C
= 5mA
min
10
3
75
1.4
0.75
typ
1.9
1.4
11
0.45
max
1
400
0.5
2.7
1.6
Unit
μ
A
V
V
V
GHz
pF
PS
pF
Marking symbol :
1S
*
h
FE
Rank classification
Rank
P
Q
R
h
FE
75 ~ 130
110 ~ 220
200 ~ 400
Marking Symbol
1SP
1SQ
1SR
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