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參數資料
| 型號： | 2SC4809R |
| 英文描述： | TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 50MA I(C) | SOT-416 |
| 中文描述： | 晶體管|晶體管|叩| 10V的五（巴西）總裁| 50mA的一（c）|的SOT - 416 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 280K |
| 代理商： | 2SC4809R |
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol Rating Unit
————————————————————–
Collector to base voltage
VCBO
300
V
————————————————————–
Collector to emitter voltage
VCEO
300
V
————————————————————–
Emitter to base voltage
VEBO
5V
————————————————————–
Collector current
IC
100
mA
————————————————————–
Collector power dissipation
PC
1.5
W
——————–
PC*1
8
————————————————————–
Junction temperature
Tj
150
°C
————————————————————–
Storage temperature
Tstg
–55 to °C
+150
————————————————————–
Note: 1. Value at TC = 25°C.
1
2
3
TO-126FM
1. Emitter
2. Collector
3. Base
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test condition
———————————————————————————————————————————
Collector to base breakdown voltage
V(BR)CBO 300
—
V
IC = 10 A, IE = 0
———————————————————————————————————————————
Collector to emitter breakdown voltage
V(BR)CEO 300
—
V
IC = 1 mA, RBE = ∞
———————————————————————————————————————————
Emitter to base breakdown voltage
V(BR)EBO 5—
V
IE = 10 A, IC = 0
———————————————————————————————————————————
Collector cutoff current
ICEO
—
1.0
A
VCE = 250 V, RBE = ∞
———————————————————————————————————————————
DC current transfer ratio
hFE
40
—
200
VCE = 20 V, IC = 20 mA
———————————————————————————————————————————
Base to emitter voltage
VBE
—
1.0
V
VCE = 20 V, IC = 20 mA
———————————————————————————————————————————
Collector to emitter saturation voltage
VCE(sat)
—
1.5
V
IC = 20 mA, IB = 2 mA
———————————————————————————————————————————
Gain bandwidth product
fT
50
80
—
MHz
VCE = 20 V, IC = 20 mA
———————————————————————————————————————————
Collector Output Capacitance
Cob
—
4.0
pF
VCB = 20 V, IE = 0,
f = 1 MHz
———————————————————————————————————————————
2SC4828
Silicon NPN Triple Diffused
High Voltage Amplifier, TV Video Output
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| 2SC4833-4000 | 功能描述:兩極晶體管 - BJT VCEO=400 IC=5 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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