- 您現在的位置：買賣IC網 > PDF目錄33407 > 2SC4814-AZ 2.5 A, 100 V, NPN, Si, POWER TRANSISTOR PDF資料下載
參數資料
| 型號： | 2SC4814-AZ |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2.5 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 文件頁數： | 1/6頁 |
| 文件大小： | 161K |
| 代理商： | 2SC4814-AZ |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1998
Document No. D15604EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SC4814
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
2002
The 2SC4814 is a power transistor featuring low-saturation voltage and high hFE. This transistor is ideal for high-
precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment and for
solenoid driving in automotive equipment.
In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus
contributing to mounting cost reduction.
FEATURES
Low VCE(sat): VCE(sat)
≤ 0.3 V
@IC = 1.5 A, IB = 10 mA
High hFE:
hFE = 300 to 1,200 @VCE = 2.0 V, IC = 1.0 A
On-chip dumper-diode
Auto-mounting possible in radial taping specifications
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
VCBO
120
V
Collector to emitter voltage
VCEO
100
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
±2.5
A
Collector current (pulse)
IC(pulse)
PW
≤ 300
s, duty cycle ≤ 10%
±5.0
A
Base current (DC)
IB(DC)
1.0
A
Total power dissipation
PT
Ta = 25
°C
1.8
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC4814-AZ | 2.5 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 2SC4829-C | Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4829BTZ | Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC4829CTZ | Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC4830 | 6 A, 600 V, NPN, Si, POWER TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC4815-T-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans GP BJT NPN 60V 5A 3-Pin MP-10 T/R |
| 2SC4815-T-AZ(L) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SC4815-T-AZ-K | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC4820 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANKEN TRANSISTOR FM20 900V 6A 30W BCE |
| 2SC4833-4000 | 功能描述:兩極晶體管 - BJT VCEO=400 IC=5 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發布緊急采購，3分鐘左右您將得到回復。