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參數資料
| 型號： | 2SC4892 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type(For power switching) |
| 中文描述： | 1 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MT-4-A1, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 74K |
| 代理商： | 2SC4892 |
1
Power Transistors
2SC4892
Silicon NPN triple diffusion planar type
For power switching
I
Features
G
High-speed switching
G
High collector to base voltage V
CBO
G
Satisfactory linearity of foward current transfer ratio h
FE
G
Allowing supply with the radial taping
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
900
900
800
7
2
1
0.3
15
2
150
–55 to +150
Unit
V
V
V
V
A
A
A
W
C
C
T
C
=25
°
C
Ta=25
°
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 900V, I
E
= 0
V
EB
= 7V, I
C
= 0
I
C
= 1mA, I
B
= 0
V
CE
= 5V, I
C
= 0.05A
V
CE
= 5V, I
C
= 0.5A
I
C
= 0.2A, I
B
= 0.04A
I
C
= 0.2A, I
B
= 0.04A
V
CE
= 10V, I
C
= 0.05A, f = 1MHz
I
C
= 0.2A, I
B1
= 0.04A, I
B2
= – 0.08A,
V
CC
= 250V
min
800
6
3
typ
4
max
50
50
1.5
1
1
3
1
Unit
μ
A
μ
A
V
V
V
MHz
μ
s
μ
s
μ
s
Unit: mm
1:Base
2:Collector
3:Emitter
MT4 Type Package
1.0
10.0
±
0.2
0.55
±
0.1
2.5
±
0.2
2.5
±
0.2
4
±
0
1
±
0
2
±
0
1
±
0
S
5.0
±
0.1
2.25
±
0.2
1.2
±
0.1
0.65
±
0.1
1.05
±
0.1
0.55
±
0.1
C1.0
90
°
C1.0
1
2
3
0.35
±
0.1
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