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參數(shù)資料
| 型號(hào)： | 2SC4942AA2 |
| 廠商： | NEC Corp. |
| 英文描述： | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 中文描述： | 晶體管|晶體管|叩| 600V的五（巴西）總裁| 1A條一（c）|至243VAR |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 115K |
| 代理商： | 2SC4942AA2 |
2002
Document No. D16152EJ1V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTORS
2SC4942
NPN SILICON TRIPLE DIFFUSED TRANSISTOR
FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SC4942 is a transistor developed for high-speed high-
voltage switching. This transistor is ideal for use in switching
devices such as switching regulators and DC/DC converters.
FEATURES
New package with dimensions in between those of small
signal and power signal package
High voltage
Fast switching speed
Complementary transistor with the 2SA1871
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor
Devices” (Document No. C11531E) published by NEC
Corporation to know the specification of quality grade on the
devices and its recommended applications.
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
V
CBO
600
V
Collector to emitter voltage
V
CEO
600
V
Emitter to base voltage
V
EBO
7.0
V
Collector current (DC)
I
D(DC)
1.0
A
Collector current (pulse)
I
D(pulse)
PW
≤
10 ms, duty cycle
≤
50 %
2.0
A
Total power dissipation
P
T
7.5 cm
2
×
0.7 mm ceramic board mounted
2.0
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
Electrode connection
1. Emitter
2. Collector
3. Base
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC4942AA3 | TRANSISTOR | BJT | NPN | 600V V(BR)CEO | 1A I(C) | TO-243VAR |
| 2SC4942 | NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING |
| 2SC4954 | High Frequency Low Noise Amplifier NPN Transistor(高頻低噪聲放大器NPN晶體管) |
| 2SC4955-T2 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
| 2SC4955-T1 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC4942-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN PWR Transistor,600V,1.0A,MP-2 制造商:Renesas 功能描述:0 |
| 2SC4942-T1-AZ-AA2 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC4942-T1-AZ-AA3 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC4944-GR | 功能描述:兩極晶體管 - BJT INCORRECT MOUSER P/N RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC4944-GR(TE85L,F | 功能描述:兩極晶體管 - BJT 150mA 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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