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參數資料
| 型號： | 2SC4987B4 |
| 英文描述： | TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 200MA I(C) | SC-70VAR |
| 中文描述： | 晶體管|晶體管|叩| 15V的五（巴西）總裁| 200mA的一（c）|資深大律師，70VAR |
| 文件頁數： | 1/6頁 |
| 文件大小： | 37K |
| 代理商： | 2SC4987B4 |
Application
VHF & UHF wide band amplifire
Features
High gain bandwidth product
fT = 6 GHz typ
High gain, low noise figure
PG = 12.0 dB typ,
NF = 1.6 dB typ at f = 900 MHz
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Collector to base voltage
VCBO
20
V
———————————————————————————————————————————
Collector to emitter voltage
VCEO
12
V
———————————————————————————————————————————
Emitter to base voltage
VEBO
2V
———————————————————————————————————————————
Collector current
IC
30
mA
———————————————————————————————————————————
Collector power dissipation
PC
150
mW
———————————————————————————————————————————
Junction temperature
Tj
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
MPAK
SCALE : 4/1
1. Emitter
2. Base
3. Collector
1
2
3
2SC4902
Silicon NPN Bipolar Transistor
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相關代理商/技術參數 |
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|---|---|
| 2SC4995YD(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
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| 2SC5000(F) | 制造商:Toshiba 功能描述:NPN Bulk |
| 2SC5000_04 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Power Amplifier Applications |
| 2SC5001 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Low Vce(sat) Transistor (Strobe flash) (-20V, -10A) |
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