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參數(shù)資料
| 型號(hào)： | 2SC5008-T1FB |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | ULTRA SUPER MINIMOLD PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大小： | 51K |
| 代理商： | 2SC5008-T1FB |
1993
DATA SHEET
DESCRIPTION
The 2SC5008 is an NPN epitaxial silicon transistor designed for use
in low noise and small signal amplifiers from VHF band to L band. Low
noise figure, high gain, and high current capability achieve a very wide
dynamic range and excellent linearity. This is achieved by direct nitride
passivated base surface, process (NEST2 process) which is an NEC
proprietary fabrication technique.
FEATURES
Low Voltage Use.
High fT: 8.0 GHz TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)
Low Cre: 0.3 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)
Low NF: 1.9 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)
High |S21e|2: 7.5 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)
Ultra Super Mini Mold Package.
ORDERING INFORMATION
PART
QUANTITY
PACKING STYLE
NUMBER
2SC5008
50 pcs./Unit
2SC5008-T1
3 kpcs./Reel
* Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
10
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
35
mA
Total Power Dissipation
PT
125 mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
–65 to + 150
C
SILICON TRANSISTOR
Document No. P10387EJ2V0DS00 (2nd edition)
(Previous No. TD-2433)
Date Published July 1995 P
Printed in Japan
2SC5008
NPN SILICON EPITAXIAL TRANSISTOR
3 PINS ULTRA SUPER MINI MOLD
Embossed tape 8 mm wide.
Pin3 (Collector) face to perforation side
of the tape.
1.6 ± 0.1
0.8 ± 0.1
1.6
±
0.1
1.0
0.5
0.2
+0.1
–0
0.3
+0.1
–0
2
1
3
0.75
±
0.05
0.6
0
to
0.1
0.15
+0.1
–0.05
PACKAGE DIMENSIONS
in millimeters
1. Emitter
2. Base
3. Collector
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC5008-FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5008-FB-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5008-T1FB-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5008-FB-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5009-T1FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5009 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD |
| 2SC5009-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD |
| 2SC5010 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD |
| 2SC5010(NE68519) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 2SC5010-A | 功能描述:RF TRANSISTOR NPN SOT-523 制造商:cel 系列:- 包裝:剪帶 零件狀態(tài):有效 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:6V 頻率 - 躍遷:12GHz 噪聲系數(shù)（dB，不同 f 時(shí)的典型值）:1.5dB @ 2GHz 增益:8.5dB 功率 - 最大值:125mW 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:75 @ 10mA，3V 電流 - 集電極（Ic）（最大值）:30mA 安裝類型:表面貼裝 封裝/外殼:SOT-523 供應(yīng)商器件封裝:- 標(biāo)準(zhǔn)包裝:1 |
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