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參數資料
| 型號： | 2SC5013-GB-A |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SUPERMINI-4 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 44K |
| 代理商： | 2SC5013-GB-A |
1993
DATA SHEET
SILICON TRANSISTOR
Document No. P10401EJ2V0DS00 (2nd edition)
(Previous No. TD-2413)
Date Published July 1995 P
Printed in Japan
2SC5013
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS SUPER MINI MOLD
PACKAGE DIMENSIONS
in millimeters
Caution; Electrostatic Sensitive Device.
FEATURES
Small Package
High Gain Bandwidth Product (fT = 10 GHz TYP.)
Low Noise, High Gain
Low Voltage Operation
ORDERING INFORMATION
PART
QUANTITY
PACKING STYLE
NUMBER
2SC5013-T1
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin3 (Base), Pin4 (Emitter) face to
perforation side of the tape.
2SC5013-T2
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin1 (Collector), Pin2 (Emitter) face
to perforation side of the tape.
*
Please contact with responsible NEC person, If you require
evaluation sample. Unit sample quantity shall be 50 pcs.
(Part No.: 2SC5013)
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
10
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
35
mA
Total Power Dissipation
PT
150
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
–65 to +150
C
2.1 ± 0.2
1.25 ± 0.1
0.3
(LEADS 2, 3, 4)
(1.3)
0.65
0.60
(1.25)
2.0
±
0.2
1
4
+0.1
–0.05
0.4
+0.1
–0.05
0.3
+0.1 –0.05
XYZ
0 to 0.1
0.3
0.9
±
0.1
0.15
+0.1
–0.05
0.3
+0.1 –0.05
2
3
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC5013-T2EB-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5013-EB-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5013-T1EB-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5013-T2GB-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5013-FB-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC5013-T1 | 制造商:RNS 功能描述: |
| 2SC5013-T1-A | 功能描述:RF TRANSISTOR NPN SOT-343 制造商:cel 系列:- 包裝:帶卷（TR） 零件狀態:有效 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:10V 頻率 - 躍遷:10GHz 噪聲系數（dB，不同 f 時的典型值）:1.8dB @ 2GHz 增益:9.5dB 功率 - 最大值:150mW 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:50 @ 10mA，6V 電流 - 集電極（Ic）（最大值）:35mA 安裝類型:表面貼裝 封裝/外殼:SC-82A，SOT-343 供應商器件封裝:SOT-343 標準包裝:3,000 |
| 2SC5013-T2 | 制造商:NEC 制造商全稱:NEC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
| 2SC5014 | 制造商:NEC 制造商全稱:NEC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
| 2SC5014-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
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