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參數資料
型號: 2SC5013-T2GB
元件分類: 小信號晶體管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
文件頁數: 1/8頁
文件大小: 44K
代理商: 2SC5013-T2GB
1993
DATA SHEET
SILICON TRANSISTOR
Document No. P10401EJ2V0DS00 (2nd edition)
(Previous No. TD-2413)
Date Published July 1995 P
Printed in Japan
2SC5013
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS SUPER MINI MOLD
PACKAGE DIMENSIONS
in millimeters
Caution; Electrostatic Sensitive Device.
FEATURES
Small Package
High Gain Bandwidth Product (fT = 10 GHz TYP.)
Low Noise, High Gain
Low Voltage Operation
ORDERING INFORMATION
PART
QUANTITY
PACKING STYLE
NUMBER
2SC5013-T1
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin3 (Base), Pin4 (Emitter) face to
perforation side of the tape.
2SC5013-T2
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin1 (Collector), Pin2 (Emitter) face
to perforation side of the tape.
*
Please contact with responsible NEC person, If you require
evaluation sample. Unit sample quantity shall be 50 pcs.
(Part No.: 2SC5013)
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
10
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
35
mA
Total Power Dissipation
PT
150
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
–65 to +150
C
2.1 ± 0.2
1.25 ± 0.1
0.3
(LEADS 2, 3, 4)
(1.3)
0.65
0.60
(1.25)
2.0
±
0.2
1
4
+0.1
–0.05
0.4
+0.1
–0.05
0.3
+0.1 –0.05
XYZ
0 to 0.1
0.3
0.9
±
0.1
0.15
+0.1
–0.05
0.3
+0.1 –0.05
2
3
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
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