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參數(shù)資料
| 型號(hào)： | 2SC5015-T2KB |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 43K |
| 代理商： | 2SC5015-T2KB |
1993
DATA SHEET
SILICON TRANSISTOR
Document No. P10394EJ2V0DS00 (2nd edition)
(Previous No. TD-7938)
Date Published August 1995 P
Printed in Japan
2SC5015
FEATURES
Small Package
High Gain Bandwidth Product (fT = 12 GHz TYP.)
Low Noise, High Gain
Low Voltage Operation
ORDERING INFORMATION
PART
QUANTITY
PACKING STYLE
NUMBER
2SC5015-T1
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin3 (Base), Pin4 (Emitter) faceto
perforation side of the tape.
2SC5015-T2
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin1 (Collector), Pin2 (Emitter) faceto
perforation side of the tape.
* Please contact with responsible NEC person, if you require evaluation
sample.Unit sample quantity shall be 50 pcs. (Part No.: 2SC5014)
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage
VCBO
9V
Collector to Emitter Voltage
VCEO
6V
Emitter to Base Voltage
VEBO
2V
Collector Current
IC
30
mA
Total Power Dissipation
PT
150
mW
Junction Temperature
Ti
150
C
Storage Temperature
Tstg
–65 to + 150
C
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS SUPER MINI MOLD
Caution: Electrostatic Sensitive Device
PACKAGE DIMENSIONS
in millimeters
T83
2.1 ± 0.2
1.25 ± 0.1
0.3
(LEADS 2, 3, 4)
+0.1
–0.05
0.3
+0.1
–0.05
(1.3)
(1.25)
2.0
±
0.2
0.65
0.60
23
1
4
0.3
+0.1
–0.05
0.4
+0.1
–0.05
0.9
±
0.1
0.3
0 to 0.1
0.15
+0.1
–0.05
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5016 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC5018 | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:Silicon NPN triple diffusion planer type(For high breakdown voltage high-speed switching) |
| 2SC5018ZD-02TL | 制造商:HITACHI 功能描述: |
| 2SC5019 | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer type(For UHF band low-noise amplification) |
| 2SC501900L | 功能描述:TRANS NPN HF 10VCEO 80MA MINIPWR RoHS:否 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類(lèi)型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉(zhuǎn)換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類(lèi)型:表面貼裝 封裝/外殼:4-SMD，扁平引線(xiàn) 供應(yīng)商設(shè)備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱(chēng):BFP 740FESD E6327DKR |
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