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參數(shù)資料
型號: 2SC5069
廠商: Sanyo Electric Co.,Ltd.
英文描述: NPN Epitaxial Planar Silicon Transistor for Low-Frequency General-Purpose Amplifier,Driver Applications(低頻通用放大器,驅(qū)動器應(yīng)用的NPN硅外延平面型晶體管)
中文描述: 瑞展硅晶體管低頻通用放大器,驅(qū)動器應(yīng)用(低頻通用放大器,驅(qū)動器應(yīng)用的npn型硅外延平面型晶體管)
文件頁數(shù): 1/4頁
文件大小: 106K
代理商: 2SC5069
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
Low-Frequency General-Purpose Amplifier,
Driver Applications
Ordering number:EN4509
2SC5069
12599HA (KT)/42894MT (KOTO) BX-0115 No.4509–1/4
Specifications
Absolute Maximum Ratings
at Ta = 25C
Package Dimensions
unit:mm
2038A
[2SC5069]
C
C
Electrical Characteristics
at Ta = 25C
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
(Bottom view)
Features
· High current capacity.
· Adoption of MBIT process.
· High DC current gain.
· Low collector-to-emitter saturation voltage.
· High V
EBO
.
Marking :CU
4.5
1.6
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0.4
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0.4
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