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參數資料
型號: 2SC5096FT-O
元件分類: 小信號晶體管
英文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: 2-1B1A, TESM, 3 PIN
文件頁數: 1/3頁
文件大小: 125K
代理商: 2SC5096FT-O
2SC5096FT
2003-07-31
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5096FT
VHF~UHF Band Low Noise Amplifier Applications
Low noise figure, high gain.
NF = 1.8dB, |S21e|2 = 7.5dB (f = 2 GHz)
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
8
V
Emitter-base voltage
VEBO
1.5
V
Base current
IB
7
mA
Collector current
IC
15
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Microwave Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Transition frequency
fT
VCE = 6 V, IC = 7 mA
7
10
GHz
S21e
2 (1)
VCE = 6 V, IC = 7 mA, f = 1 GHz
13
Insertion gain
S21e
2 (2)
VCE = 6 V, IC = 7 mA, f = 2 GHz
4.5
7.5
dB
NF (1)
VCE = 6 V, IC = 3 mA, f = 1 GHz
1.4
Noise figure
NF (2)
VCE = 6 V, IC = 3 mA, f = 2 GHz
1.8
3.0
dB
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 10 V, IE = 0
1
A
Emitter cut-off current
IEBO
VEB = 1 V, IC = 0
1
A
DC current gain
hFE
(Note 1)
VCE = 6 V, IC = 7 mA
50
160
Output capacitance
Cob
0.5
pF
Reverse transfer capacitance
Cre
VCB = 10 V, IE = 0, f = 1 MHz (Note 2)
0.4
0.85
pF
Note 1: hFE classification R: 50~100, O: 80~160
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-1B1A
Weight: 0.0022 g (typ.)
相關PDF資料
PDF描述
2SC5096F UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5097-O UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5097 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5097-R UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5097 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
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