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參數(shù)資料
| 型號(hào)： | 2SC5108-Y |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | 2-2H1A, SSM, 3 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 190K |
| 代理商： | 2SC5108-Y |
2SC5108
2003-03-24
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5108
For VCO Application
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
10
V
Emitter-base voltage
VEBO
3
V
Base current
IB
15
mA
Collector current
IC
30
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 10 V, IE = 0
0.1
mA
Emitter cut-off current
IEBO
VEB = 1 V, IC = 0
0.1
mA
DC current gain
hFE
(Note 1)
VCE = 5 V, IC = 5 mA
80
240
Transition frequency
fT
VCE = 5 V, IC = 5 mA
4
6
GHz
Insertion gain
S21e
2
VCE = 5 V, IC = 5 mA, f = 1 GHz
7
11
dB
Output capacitance
Cob
0.7
pF
Reverse transfer capacitance
Cre
VCB = 5 V, IE = 0, f = 1 MHz
(Note 2)
0.5
0.9
pF
Collector-base time constant
Ccrbb’
VCB = 5 V, IC = 3 mA, f = 30 MHz
5.5
10
ps
Note 1: hFE classification O: 80~160, Y: 120~240
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2H1A
Weight: 2.4 mg (typ.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC5108 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5108-O | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5109-Y | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5109-O | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5110 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5108-Y(T5L,F,T) | 制造商:Toshiba America Electronic Components 功能描述:VHF/UHF OSCILLATOR 10V SSM 制造商:Toshiba America Electronic Components 功能描述:TRANS RF NPN 10V 1GHZ SSM |
| 2SC5108-Y(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC5108-Y,LF | 功能描述:TRANS RF NPN 10V 1GHZ SSM 制造商:toshiba semiconductor and storage 系列:- 包裝:剪切帶（CT） 零件狀態(tài):停產(chǎn) 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:10V 頻率 - 躍遷:6GHz 噪聲系數(shù)（dB，不同 f 時(shí)的典型值）:- 增益:11dB 功率 - 最大值:100mW 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:120 @ 5mA，5V 電流 - 集電極（Ic）（最大值）:30mA 安裝類型:表面貼裝 封裝/外殼:SC-75，SOT-416 供應(yīng)商器件封裝:SSM 標(biāo)準(zhǔn)包裝:1 |
| 2SC5109 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:NPN EPITAXIAL PLANAR TYPE (FOR VCO APPLICATION) |
| 2SC5109O | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 60MA I(C) | SC-59 |
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