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參數資料
| 型號： | 2SC5111FT-O |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | TESM, 2-1B1A, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 132K |
| 代理商： | 2SC5111FT-O |
2SC5111FT
2003-08-08
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5111FT
For VCO Application
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
10
V
Emitter-base voltage
VEBO
3
V
Base current
IB
30
mA
Collector current
IC
60
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 10 V, IE = 0
0.1
A
Emitter cut-off current
IEBO
VEB = 1 V, IC = 0
0.1
A
DC current gain
hFE
(Note 1)
VCE = 5 V, IC = 5 mA
80
240
Transition frequency
fT
VCE = 5 V, IC = 5 mA
3
5
GHz
Insertion gain
S21e
2
VCE = 5 V, IC = 5 mA, f = 1 GHz
6
10
dB
Output capacitance
Cob
0.9
pF
Reverse transfer capacitance
Cre
VCB = 5 V, IE = 0, f = 1 MHz
(Note 2)
0.7
1.1
pF
Collector-base time constant
Ccrbb’
VCB = 5 V, IC = 3 mA, f = 30 MHz
6
11
ps
Note 1: hFE classification O: 80~160, Y: 120~240
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-1B1A
Weight: 0.0022 g (typ.)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC5111FTY | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 60MA I(C) | SOT-416 |
| 2SC5111O | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 60MA I(C) | TO-236VAR |
| 2SC5111Y | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 60MA I(C) | TO-236VAR |
| 2SC5111-Y(TE85L,F) | 制造商:Toshiba 功能描述:NPN |
| 2SC5112 | 制造商:ROHM 制造商全稱:Rohm 功能描述:TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE |
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