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參數(shù)資料
| 型號： | 2SC5130 |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN Triple Diffused Planar Transistor(High Voltage And High Speed Switching Transistor)(硅NPN三倍擴散平面晶體管（高壓和高速開關晶體管）) |
| 中文描述： | 5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220F, FM20, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 24K |
| 代理商： | 2SC5130 |
129
Silicon NPN Triple Diffused Planar Transistor
(High Voltage and High Speed Switchihg Transistor)
2S C5130
Application :
Switching Regulator and General Purpose
External Dimensions
FM20(TO220F)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC5130
600
400
10
5(
Pulse
10)
2
30(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
2SC5130
100
max
10
max
400
min
10to30
0.5
max
1.3
max
20
typ
30
typ
Unit
μ
A
μ
A
V
V
V
MHz
pF
Conditions
V
CB
=500V
V
EB
=10V
I
C
=25mA
V
CE
=4V, I
C
=1.5A
I
C
=1.5A, I
B
=0.3A
I
C
=1.5A, I
B
=0.3A
V
CE
=12V, I
E
=–0.3A
V
CB
=10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
R
L
(
)
133
I
C
(A)
1.5
V
(V)
–5
I
B2
(A)
–0.3
t
on
(
μ
s)
1
max
t
stg
(
μ
s)
2
max
t
f
(
μ
s)
0.3
max
I
(A)
0.15
V
(V)
10
3.3
±0.2
10.1
±0.2
4
±
1
±
1
8
±
0
±
3
±
2.54
2.54
1.35
±0.15
0.85
+0.2
-0.1
1.35
±0.15
2.2
±0.2
4.2
±0.2
2.8
c0.5
2.4
±0.2
0.45
+0.2
-0.1
B
E
C
a
b
Weight : Approx 2.0g
a. Type No.
b. Lot No.
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
t
on
t
stg
t
f
–I
C
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)–I
C
Characteristics
(Typical)
Pc–Ta Derating
Reverse Bias Safe Operating Area
Safe Operating Area
(Single Pulse)
0.01
0.05
0.1
0.5
1
5
0
0.5
1.5
1.0
Collector Current I
C
(A)
I
C/
I
B
=5 Const.
125C (Case Temp)
25C (Case Temp)
–55C (Case Temp)
C
C
(
0.01
0.1
0.05
1
5
0.5
5
10
50
Collector Current I
C
(A)
D
F
(V
CE
=4V)
125C
25C
–55C
0.1
3
1
0.5
0.1
0.5
2
1
S
t
o
t
s
t
f
(
μ
s
0
2
1
4
3
5
0
1.4
1.2
0.4
0.6
0.8
1.0
0.2
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=4V)
15 aeep
–CaTp
2Ca m
Collector Current I
C
(A)
t
stg
t
on
t
f
V
CC
200V
I
C
:I
B1
:–I
B2
=10:1:2
0.4
1
5
0.5
1
10
100
1000
Time t(ms)
T
θ
j
(
30
20
10
2
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
10
50
5
500
100
1
0.5
0.1
10
20
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
Without Heatsink
Natural Cooling
L=3mH
–I
B2
=0.5A
Duty:less than 1%
10
50
5
100
500
1
0.5
0.1
10
20
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
100
μ
s
50
μ
s
Without Heatsink
Natural Cooling
0
0
2
1
5
3
4
2
1
3
4
Collector-Emitter Voltage V
CE
(V)
C
C
(
800mA
500mA
150mA
300mA
I
B
=50mA
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相關代理商/技術參數(shù) |
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|---|---|
| 2SC5130_01 | 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:Silicon NPN Triple Diffused Planar Transistor |
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