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參數資料
| 型號： | 2SC5182-T2FB |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-59, 3 PIN |
| 文件頁數： | 1/11頁 |
| 文件大小： | 46K |
| 代理商： | 2SC5182-T2FB |
1994
DATA SHEET
SILICON TRANSISTOR
2SC5182
NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
Low noise
NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
Mini-Mold package
EIAJ: SC-59
ORDERING INFORMATION
PART
QUANTITY
ARRANGEMENT
NUMBER
2SC5182-T1
Embossed tape, 8 mm wide,
Pin No. 3 (Collector)
facing the perforations
2SC5182-T2
3 000 units/reel
Embossed tape, 8 mm wide,
Pins No. 1 (Emitter) and No. 2 (Base)
facing the perforations
* Contact your NEC sales representative to order samples for evaluation
(available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage
VCBO
5V
Collector to Emitter Voltage
VCEO
3V
Emitter to Base Voltage
VEBO
2V
Collector Current
IC
30
mA
Total Power Dissipation
PT
90
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
–65 to +150
C
Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Document No. P12106EJ2V0DS00 (2nd edition)
(Previous No. TC-2479)
Date Published November 1996 N
Printed in Japan
PACKAGE DIMENSIONS
(Units: mm)
2.9±0.2
0.95
0.4
–
0.05
+0.1
1.5
0.4
–
0.05
+0.1
2.8±0.2
0.65 –0.15
+0.1
3
2
1
0.16
–
0.06
+0.1
0
to
0.1
1.1
to
1.4
0.3
Marking
T86
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
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相關代理商/技術參數 |
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| 2SC5183 | 制造商:NEC 制造商全稱:NEC 功能描述:SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
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| 2SC5183R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SC5183R-T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-143 |
| 2SC5183R-T2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-143 |
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