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參數資料
| 型號： | 2SC5208 |
| 廠商： | Toshiba Corporation |
| 英文描述： | Silicon NPN Triple Diffused Type High-Voltage Switching Applications |
| 中文描述： | 硅npn型三重擴散型高壓開關應用 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 174K |
| 代理商： | 2SC5208 |
2SC5208
2006-11-13
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5208
High-Voltage Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
DC-AC Inverter Applications
High-speed switching: t
r
= 1.0
μ
s (max) ,t
f
= 1.5
μ
s (max)
High breakdown voltage: V
CEO
= 400 V
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
600
V
Collector-emitter voltage
V
CEO
400
V
Emitter-base voltage
V
EBO
7
V
DC
I
C
0.8
Collector current
Pulse
I
CP
1.5
A
Base current
I
B
0.5
A
Collector power dissipation
P
C
1.3
W
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-8M1A
Weight: 0.55 g (typ.)
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