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| 型號： | 2SC5276 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | CP4, 4 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 81K |
| 代理商： | 2SC5276 |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
UHF to S Band Low-Noise Amplifier,
OSC Applications
Ordering number:ENN5186
2SC5276
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30105TN (PC)/21599TH (KT)/83095YK (KOTO) TA-0412 No.5186–1/5
0.5
0 to 0.1
0.16
1.9
0.95 0.95
0.4
43
0.95 0.85
2.9
0.6
2
1
0.5
1.1
0.8
2.5
1.5
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2110A
[2SC5276]
Features
Low noise : NF=0.9dB typ (f=1GHz).
: NF=1.4dB typ (f=1.5GHz).
High gain :
S21e2=11dB typ (f=1.5GHz).
High cutoff frequency : fT=11GHz typ.
Low-voltage, low-current operation
(VCE=1V, IC=1mA)
: fT=7GHz type.
:
S21e2=6dB typ (f=1.5GHz).
C
Electrical Characteristics at Ta = 25C
1 : Emitter
2 : Collector
3 : Emitter
4 : Base
SANYO : CP4
* : The 2SC5276 is classified by 10mA hFE as follows :
Marking : MN
hFE rank : 3, 4, 5
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| 2SC5277 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:UHF to S Band Low-Noise Amp, OSC Applications |
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| 2SC5277A-2-TL-E | 功能描述:兩極晶體管 - BJT BIP NPN 30MA 10V FT=8G RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5277D1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
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