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參數(shù)資料
| 型號： | 2SC5310-6 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 1A I(C) | SOT-346 |
| 中文描述： | 晶體管|晶體管|叩| 25V的五（巴西）總裁| 1A條一（c）|的SOT - 346 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 44K |
| 代理商： | 2SC5310-6 |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1973/2SC5310
DC/DC Converter Applications
Ordering number:ENN5613
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
60100TS (KOTO) TA-1556 No.5613–1/4
0.4
0.95 0.95
1.9
2.9
0
1
2
0
0.16
0 to 0.1
0
1
2
3
1
Package Dimensions
unit:mm
2018B
[2SA1973/2SC5310]
C
C
Electrical Characteristics
at Ta = 25C
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
Features
· Adoption of FBET, MBIT processes.
· Large current capacitance.
· Low collector-to-emitter saturation voltage.
· High-speed switching.
· Ultrasmall package facilitates miniaturization in end
products.
Specifications
( ) : 2SA1973
Absolute Maximum Ratings
at Ta = 25C
Mounted on a glass-epoxy board (20
×
30
×
1.6mm)
r
m
a
P
l
b
m
y
S
s
n
o
n
o
C
s
g
n
R
t
U
e
g
a
V
V
a
V
t
e
C
t
e
C
t
e
C
p
s
D
r
e
C
e
T
n
o
n
u
J
m
e
T
e
g
a
S
e
s
r
m
e
s
a
B
E
a
-
e
C
-
e
C
-
m
E
r
e
C
r
e
C
e
s
a
B
V
V
V
O
O
O
B
E
B
C
C
E
IC
IP
C
IB
PC
j
g
T
0
5
3
2
6
1
3
2
2
1
1
+
o
V
V
V
A
A
e
g
a
e
g
B
)
s
P
(
0
0
0
0
0
5
5
5
A
W
m
m
n
o
e
p
e
p
m
5
5
–
r
m
a
P
l
b
m
y
S
s
n
o
n
o
C
s
g
n
R
y
t
U
n
m
p
x
a
m
1
1
0
4
t
e
C
e
C
n
G
f
C
f
C
t
e
C
* : The 2SA1973/2SC5310 are classified by 100mA h
FE
as follows :
r
r
m
C
D
e
C
E
I
I
O
O
B
B
F
C
E
hE
VB
C
VB
E
VE
C
I
V
I
V
I
V
0
2
=
3
=
2
=
E0
=
C0
=
C
1
=
A
A
μ
μ
t
A
m
0
0
*
5
3
1
*
0
k
n
a
R
5
6
hE
F
0
7
2
o
5
3
1
0
0
4
o
0
0
2
Continued on next page.
Marking : 2SA1973 : NS
2SC5310 : NN
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|---|---|
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| 2SC5315 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| 2SC5316 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
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| 2SC5317F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SC5317FT | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
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