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參數資料
| 型號： | 2SC5335(TENTATIVE) |
| 廠商： | Panasonic Corporation |
| 英文描述： | Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay |
| 中文描述： | npn型硅外延式龍門 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 38K |
| 代理商： | 2SC5335(TENTATIVE) |
1
Transistor
2SC5335(Tentative)
Silicon NPN epitaxial planer type
For low-frequency output amplification
I
Features
G
High foward current transfer ratio h
FE
.
G
Low collector to emitter saturation voltage V
CE(sat)
.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
MT2 Type Package
2.5
±
0.1
4
±
0
1
±
0
2.5
±
0.5
2.5
±
0.5
2
±
0
6.9
±
0.1
1.05
±
0.05
(1.45)
4.0
0.7
0.8
0
0
0
1
1
0.65 max.
0.45
+0.1
0
+
–
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*1
T
j
T
stg
Ratings
60
50
15
1.5
0.7
1.0
150
–55 ~ +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*1
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
V
CE
= 20V, I
B
= 0
I
C
= 10
μ
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 10V, I
C
= 150mA
I
C
= 500mA, I
B
= 50mA
V
CB
= 10V, I
E
= –10mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
60
50
15
400
typ
0.15
200
11
max
1
10
2000
0.4
15
Unit
μ
A
μ
A
V
V
V
V
MHz
pF
*1
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
*1
h
FE
Rank classification
Rank
R
S
T
h
FE
400 ~ 800
600 ~ 1200 1000 ~ 2000
1.2
±
0.1
0.65
0.45
0.1
+
–
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
(HW type)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC5336 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
| 2SC5336(NE856M02) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 2SC5336-AZ | 功能描述:RF TRANSISTOR NPN SOT-89 制造商:cel 系列:- 包裝:剪帶 零件狀態:有效 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:12V 頻率 - 躍遷:6.5GHz 噪聲系數（dB，不同 f 時的典型值）:1.8dB @ 1GHz 增益:12dB 功率 - 最大值:1.2W 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:50 @ 20mA，10V 電流 - 集電極（Ic）（最大值）:100mA 安裝類型:表面貼裝 封裝/外殼:TO-243AA 供應商器件封裝:- 標準包裝:1 |
| 2SC5336RE | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | TO-243 |
| 2SC5336RE-T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | TO-243 |
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