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參數資料
| 型號： | 2SC5337-T1 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | POWER, MINIMOLD PACKAGE-4 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 47K |
| 代理商： | 2SC5337-T1 |
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P10939EJ2V1DS00 (2nd edition)
Date Published September 2001 NS CP(K)
Printed in Japan
1996, 2001
NPN SILICON RF TRANSISTOR
2SC5337
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
4-PIN POWER MINIMOLD
The mark
shows major revised points.
FEATURES
Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA
Low noise
NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz
NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz
4-pin power minimold package with improved gain from the 2SC4536
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC5337
25 pcs (Non reel)
Magazine case
2SC5337-T1
1 kpcs/reel
12 mm wide embossed taping
Collector face the perforation side of the tape
Remark To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
30
V
Collector to Emitter Voltage
VCEO
15
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
250
mA
Total Power Dissipation
Ptot
Note
2.0
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
65 to +150
°C
Note Mounted on 16 cm
2
× 0.7 mm (t) ceramic substrate (Copper plating)
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC5338-T1SF | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5338SE | Si, RF SMALL SIGNAL TRANSISTOR |
| 2SC5343-G-AP | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC5343-O-BP | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC5353-T60-K | 3 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-126 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC5337-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT NPN 15V 0.25A 4-Pin(3+Tab) Power Mini-Mold T/R Cut Tape |
| 2SC5337-T1-AZ-QR | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5337-T1-AZ-QS | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5338 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
| 2SC5338(NE462M02) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
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