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參數(shù)資料
| 型號： | 2SC5346 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification) |
| 中文描述： | 50 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | MT-2-A1, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 36K |
| 代理商： | 2SC5346 |
1
Transistor
2SC5346
Silicon NPN epitaxial planer type
For low-frequency high breakdown voltage amplification
Complementary to 2SA1982
I
Features
G
Satisfactory linearity of forward current transfer ratio h
FE
.
G
High collector to emitter voltage V
CEO
.
G
Small collector output capacitance C
ob
.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
MT2 Type Package
2.5
±
0.1
4
±
0
1
±
0
2.5
±
0.5
2.5
±
0.5
2
±
0
6.9
±
0.1
1.05
±
0.05
(1.45)
4.0
0.7
0.8
0
0
0
1
1
0.65 max.
0.45
+0.1
0
+
–
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*1
T
j
T
stg
Ratings
150
150
5
100
50
1.0
150
–55 ~ +150
Unit
V
V
V
mA
mA
W
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Noise voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CEO
V
EBO
h
FE*1
V
CE(sat)
NV
f
T
C
ob
Conditions
V
CB
= 100V, I
E
= 0
I
C
= 0.1mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 5V, I
C
= 10mA
I
C
= 30mA, I
B
= 3mA
V
CE
= 10V, I
C
= 1mA, G
V
= 80dB
R
g
= 100k
, Function = FLAT
V
CB
= 10V, I
E
= –10mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
150
5
130
typ
150
160
max
1
330
1
300
5
Unit
μ
A
V
V
V
mV
MHz
pF
*1
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
*1
h
FE
Rank classification
Rank
R
S
h
FE
130 ~ 220
185 ~ 330
1.2
±
0.1
0.65
0.45
0.1
+
–
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
(HW type)
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相關代理商/技術參數(shù) |
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| 2SC5347AE-TD-E | 功能描述:兩極晶體管 - BJT HIGH-FREQUENCY AMPLIFIER RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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