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參數(shù)資料
型號: 2SC5351
元件分類: 功率晶體管
英文描述: 2 A, 450 V, NPN, Si, POWER TRANSISTOR
封裝: 2-8M1A, 3 PIN
文件頁數(shù): 1/5頁
文件大小: 141K
代理商: 2SC5351
2SC5351
2004-07-26
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5351
High-Voltage Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
High speed: tr = 0.5 s (max), tf = 0.3 s (max) (IC = 0.8 A)
High breakdown voltage: VCEO = 450 V
High DC current gain: hFE = 20 (min) (IC = 0.2 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
650
V
Collector-emitter voltage
VCEO
450
V
Emitter-base voltage
VEBO
7
V
DC
IC
2
Collector current
Pulse
ICP
4
A
Base current
IB
0.5
A
Collector power dissipation
PC
1.3
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 520 V, IE = 0
20
A
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
10
mA
Collector-base breakdown voltage
V (BR) CBO
IC = 1 mA, IE = 0
650
V
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IC = 0
450
V
hFE (1)
VCE = 5 V, IC = 1 mA
13
DC current gain
hFE (2)
VCE = 5 V, IC = 0.2 A
20
65
Collector-emitter saturation voltage
VCE (sat)
IC = 0.8 A, IB = 0.1 A
1.0
V
Base-emitter saturation voltage
VBE (sat)
IC = 0.8 A, IB = 0.1 A
1.3
V
Rise time
tr
0.5
Storage time
tstg
2.0
Switching time
Fall time
tf
IB1 = 0.1 A, IB2 = 0.2 A,
duty cycle ≤ 1%
0.3
s
Unit: mm
JEDEC
JEITA
TOSHIBA
2-8M1A
Weight: 0.55 g (typ.)
I B1
20 s
VCC ≈ 200 V
Output
250
IB2
IB1
Input
I B2
IC
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