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參數資料
| 型號： | 2SC5356(2-7B7A) |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | LEAD FREE, 2-7B7A, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 185K |
| 代理商： | 2SC5356(2-7B7A) |
2SC5356
2006-11-10
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC5356
High Voltage Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
Excellent switching times: tf = 0.5 μs (max) (IC = 1.2 A)
High collectors breakdown voltage: VCEO = 800 V
High DC current gain: hFE = 15 (min) (IC = 0.15 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
900
V
Collector-emitter voltage
VCEO
800
V
Emitter-base voltage
VEBO
7
V
DC
IC
3
Collector current
Pulse
ICP
5
A
Base current
IB
1
A
Ta = 25°C
1.5
Collector power
dissipation
Tc = 25°C
PC
25
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-7B5A
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-7B7A
Weight: 0.36 g (typ.)
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| 2SC5358O | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 230V V(BR)CEO | 15A I(C) | TO-247VAR |
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