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參數資料
| 型號： | 2SC5363(TENTATIVE) |
| 英文描述： | 2SC5363(Tentative) - NPN Transistor |
| 中文描述： | 2SC5363（暫定） - NPN晶體管 |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 47K |
| 代理商： | 2SC5363(TENTATIVE) |
61598TS (KOTO) TA-1238 No.5883-1/3
2SC5304
Ordering number:EN5883
Inverter Lighting Applications
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
NPN Triple Diffused Planar Silicon Transistor
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Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2079B
[2SC5304]
Features
High breakdown voltage (VCBO=1000V).
High reliability (Adoption of HVP process).
Adoption of MBIT process.
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1:Base
2:Collector
3:Emitter
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