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參數資料
| 型號： | 2SC5380 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | For horizontal deflection output |
| 中文描述： | 16 A, 600 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TOP-3E, FULL PACK-3 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 37K |
| 代理商： | 2SC5380 |
1
Power Transistors
2SC5380, 2SC5380A
Silicon NPN triple diffusion mesa type
For horizontal deflection output
I
Features
G
High breakdown voltage, and high reliability through the use of a
glass passivation layer
G
High-speed switching
G
Wide area of safe operation (ASO)
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
1500
1500
600
5
20
16
8
100
3.5
150
–55 to +150
Unit
V
V
V
V
A
A
A
W
C
C
T
C
=25
°
C
Ta=25
°
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff
current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
Conditions
V
CB
= 1000V, I
E
= 0
V
CB
= 1500V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 8A
I
C
= 8A, I
B
= 2A
I
C
= 8A, I
B
= 2A
V
CE
= 10V, I
C
= 0.1A, f = 0.5MHz
I
C
= 8A, I
B1
= 2A, I
B2
= –4A
min
8
typ
3
max
50
1
50
16
3
1.5
4.0
0.3
Unit
μ
A
mA
μ
A
V
V
MHz
μ
s
μ
s
2SC5380
2SC5380A
Unit: mm
1:Base
2:Collector
3:Emitter
TOP–3E Full Pack Package
15.5
±
0.5
2
±
0
2
±
0
2
1
±
0
3
±
0
5
±
0
2
0
±
0
2
2
1
3.0
±
0.3
φ
3.2
±
0.1
4
5.45
±
0.3
1
2
3
5.45
±
0.3
1.1
±
0.1
2.0
±
0.2
4.0
5
°
5
°
5
°
5
°
5
°
5
°
0.7
±
0.1
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PDF描述 |
|---|---|
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC5380A | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For horizontal deflection output |
| 2SC5382 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| 2SC5382-7000 | 功能描述:兩極晶體管 - BJT VCEO=550 IC=6 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5382-7100 | 功能描述:兩極晶體管 - BJT VCEO=550 IC=6 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5382-7112 | 功能描述:兩極晶體管 - BJT VCEO=550 IC=6 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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