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參數資料
| 型號： | 2SC5393 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) |
| 中文描述： | 5 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | SC-67, TO-220F, FULL PACK-3 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 34K |
| 代理商： | 2SC5393 |
1
Power Transistors
2SC5393
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
I
Features
G
High-speed switching
G
High collector to base voltage V
CBO
G
Wide area of safe operation (ASO)
G
Satisfactory linearity of foward current transfer ratio h
FE
G
Full-pack package which can be installed to the heat sink with
one screw
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
600
600
400
7
10
5
1
40
2
150
–55 to +150
Unit
V
V
V
V
A
A
A
W
C
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
Conditions
V
CB
= 600V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 0.1A
V
CE
= 5V, I
C
= 1.5A
I
C
= 1.5A, I
B
= 0.3A
I
C
= 1.5A, I
B
= 0.3A
V
CE
= 10V, I
C
= 0.1A, f = 0.5MHz
I
C
= 2A, I
B1
= 0.4A, I
B2
= – 0.8A,
V
CC
= 150V
min
10
8
typ
30
max
100
100
60
1
2
2.0
0.3
Unit
μ
A
μ
A
V
V
MHz
μ
s
μ
s
T
C
=25
°
C
Ta=25
°
C
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0
±
0.2
5.5
±
0.2
7
±
0
1
±
0
0
±
0
1
±
0
S
4
0.5
+0.2
–0.1
1.4
±
0.1
1.3
±
0.2
0.8
±
0.1
2.54
±
0.25
5.08
±
0.5
2
1
3
2.7
±
0.2
4.2
±
0.2
4
±
0
φ
3.1
±
0.1
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