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參數資料
型號: 2SC5414A-E
元件分類: 小信號晶體管
英文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: NP, 3 PIN
文件頁數: 1/6頁
文件大小: 48K
代理商: 2SC5414A-E
2SC5414A
No. A1081-1/6
Features
High gain
:
S21e
2=9.5dB typ (f=1GHz).
High cut-off frequency : fT=6.7GHz typ.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
20
V
Collector-to-Emitter Voltage
VCEO
12
V
Emitter-to-Base Voltage
VEBO
2V
Collector Current
IC
100
mA
Collector Dissipation
PC
400
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=10V, IE=0A
1.0
μA
Emitter Cutoff Current
IEBO
VEB=1V, IC=0A
10
μA
DC Current Gain
hFE1VCE=5V, IC=30mA
90*
270*
hFE2VCE=5V, IC=70mA
70
Continued on next page.
* : The 2SC5414A is classified by 30mA hFE as follows :
Rank
E
F
hFE
90 to 180
135 to 270
SANYO Semiconductors
DATA SHEET
www.semiconductor-sanyo.com/network
Ordering number : ENA1081
93009AB TK IM TC-00002103
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
's products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
2SC5414A
NPN Epitaxial Planar Silicon Transistor
High-Frequency Low-Noise
Amplifier Applications
相關PDF資料
PDF描述
2SC5414A-F UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5415A UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5415A-E UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5415A UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5415A-F UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
相關代理商/技術參數
參數描述
2SC5414AE-AA 制造商:ON Semiconductor 功能描述:BIP NPN 100MA 12V FT=6.7G - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / BIP NPN 100MA 12V FT=6.7G
2SC5414AF 制造商:ON Semiconductor 功能描述:BIP NPN 100MA 12V FT=6.7G - Bulk
2SC5414AF-AA 制造商:ON Semiconductor 功能描述:BIP NPN 100MA 12V FT=6.7G - Tape and Reel
2SC5415AE-TD-E 功能描述:兩極晶體管 - BJT ULAHIGH-FREQUENCY TRANSISTOR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC5415AF-TD-E 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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