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參數資料
| 型號： | 2SC5437 |
| 廠商： | NEC Corp. |
| 英文描述： | High-Frequecy Low-Noise Amplifier NPN Transistor(高頻低噪聲放大器NPN晶體管) |
| 中文描述： | 高Frequecy低噪聲放大器NPN晶體管（高頻低噪聲放大器npn型晶體管） |
| 文件頁數： | 1/8頁 |
| 文件大小： | 63K |
| 代理商： | 2SC5437 |
1998
PRELIMINARY DATA SHEET
FEATURE
Ultra super mini-mold thin flat package
(1.4 mm
×
0.8 mm
×
0.59 mm: TYP.)
Contains same chip as 2SC5195
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
V
CBO
9
V
Collector to Emitter Voltage
V
CEO
6
V
Emitter to Base Voltage
V
EBO
2
V
Collector Current
I
C
100
mA
Total Power Dissipation
P
T
125
mW
Junction Temperature
T
j
150
°
C
Storage Temperature
T
stg
–65 to +150
°
C
SILICON TRANSISTOR
2SC5437
NPN EPITAXIAL SILICON TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Document No. P13146EJ1V0DS00 (1st edition)
Date Published February 1998 N CP(K)
Printed in Japan
PACKAGE DIMENSIONS (in mm)
1.4 ± 0.05
0.8 ± 0.1
1
0
(
0
0
+
0
–
+
0
–
+
0
–
1
3
2
T
PIN CONNECTIONS
1: Emitter
2: Base
3: Collector
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
= 5 V, I
E
= 0
100
nA
Emitter Cut-off Current
I
EBO
V
EB
= 1 V, I
C
= 0
100
nA
DC Current Gain
h
FE
V
CE
= 1 V, I
C
= 3 mA
Note 1
80
145
Reverse Transfer Capacitance
C
re
V
CB
= 1 V, I
E
= 0, f = 1 MHz
Note 2
0.7
0.8
pF
Gain Bandwidth Product (1)
f
T
(1)
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
4.0
5.0
GHz
Gain Bandwidth Product (2)
f
T
(2)
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
9.5
GHz
Insertion Power Gain (1)
|S
21e
|
2
(1)
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
3.0
4.0
dB
Insertion Power Gain (2)
|S
21e
|
2
(2)
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
8.0
dB
Noise Figure (1)
NF (1)
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
1.9
2.5
dB
Noise Figure (2)
NF (2)
V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
1.7
dB
Notes 1.
Pulse measurement P
W
≤
350
μ
s, duty cycle
≤
2 %
2.
Collector to base capacitance measured by capacitance meter (automatic balance bridge method) when
emitter pin is connected to the guard pin.
Because this product uses high-frequency process, avoid excessive input of static electricity, etc.
The information in this document is subject to change without notice.
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