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參數資料
| 型號： | 2SC5464-O |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | SSM, 2-2H1A, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 124K |
| 代理商： | 2SC5464-O |
2SC5464
2003-07-31
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5464
VHF~UHF Band Low Noise Amplifier Applications
Low noise figure, high gain.
NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz)
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
3
V
Collector current
IC
60
mA
Base current
IB
30
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Microwave Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Transition frequency
fT
VCE = 8 V, IC = 15 mA
5
7
GHz
S21e
2 (1)
VCE = 8 V, IC = 15 mA, f = 500 MHz
17.5
Insertion gain
S21e
2 (2)
VCE = 8 V, IC = 15 mA, f = 1 GHz
8
12
dB
NF (1)
VCE = 8 V, IC = 5 mA, f = 500 MHz
1
Noise figure
NF (2)
VCE = 8 V, IC = 5 mA, f = 1 GHz
1.1
2
dB
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 10 V, IE = 0
1
A
Emitter cut-off current
IEBO
VEB = 1 V, IC = 0
1
A
DC current gain
hFE
(Note 1)
VCE = 8 V, IC = 15 mA
80
240
Output capacitance
Cob
0.8
pF
Reverse transfer capacitance
Cre
VCB = 8 V, IE = 0, f = 1 MHz
(Note 2)
0.55
pF
Note 1: hFE classification O: 80~160, Y: 160~240
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2H1A
Weight: 2.4 mg (typ.)
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