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參數資料
型號: 2SC5472
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: Silicon NPN epitaxial planer type(For low-voltage low-noise high-frequency oscillation)
中文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: SC-70, 3 PIN
文件頁數: 1/2頁
文件大小: 52K
代理商: 2SC5472
Transistors
2SC5472
Silicon NPN epitaxial planer type
1
For low-voltage low-noise high-frequency oscillation
I
Features
High transition frequency f
T
High gain of 8.2 dB and low noise of 1.8 dB at 3 V
Optimum for RF amplification of a portable telephone and pager
S-mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
9
V
Collector to emitter voltage
V
CEO
V
EBO
I
C
6
V
Emitter to base voltage
1
V
Collector current
30
mA
Collector power dissipation
P
C
T
j
T
stg
150
mW
Junction temperature
150
°
C
°
C
Storage temperature
55 to
+
150
Marking Symbol: 3A
Unit: mm
2
±
1.3
±0.1
0.3
+0.1
2.0
±0.2
1
±
(
1
3
2
(0.65) (0.65)
0
±
0
±
0
0
+
0.15
+0.10
5
°
10
°
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
I
EBO
V
CB
=
9 V, I
E
=
0
V
EB
=
1 V, I
C
=
0
V
CE
=
3 V, I
C
=
10 mA
V
CE
=
3 V, I
C
=
10 mA, f
=
2 GHz
V
CB
=
3 V, I
E
=
0, f
=
1 MHz
V
CE
=
3 V, I
C
=
10 mA, f
=
2 GHz
V
CE
=
3 V, I
C
=
3 mA, f
=
1.5 GHz
1
μ
A
μ
A
Emitter cutoff current
1
Forward current transfer ratio
h
FE
f
T
C
ob
80
200
Transition frequency
12.0
GHz
Collector output capacitance
0.6
0.9
pF
Forward transfer gain
|
S
21e
|
2
NF
6.0
8.0
dB
Noise figure
1.8
3.0
dB
I
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
S-Mini Type Package
相關PDF資料
PDF描述
2SC5473 Silicon NPN epitaxial planer type(For low-voltage low-noise high-frequency oscillation)
2SC5474 Silicon NPN epitaxial planer type(For low-voltage low-noise high-frequency oscillation)
2SC5478 Silicon NPN triple diffusion mesa type(For horizontal deflection output)
2SC5482 FOR LOW FREQUENCY POWER AMPLIFY APPRICATION SILICON NPN EPITAXIAL TYPE MICRO
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相關代理商/技術參數
參數描述
2SC5488A-TL-H 功能描述:兩極晶體管 - BJT MEDIUM OUTPUT AMPLIFIER RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC5488-TL-E 制造商:ON Semiconductor 功能描述:BIP NPN 70MA 10V FT=7G - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / BIP NPN 70MA 10V FT=7G
2SC5490A-TL-H 功能描述:兩極晶體管 - BJT BIP NPN 30MA 10V FT=8G RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC5501A-4-TR-E 功能描述:兩極晶體管 - BJT MEDIUM OUTPUT AMPLIFIER RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC5507-T2-A 制造商:Renesas Electronics Corporation 功能描述:Cut Tape
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