- 您現在的位置：買賣IC網 > PDF目錄371517 > 2SC5489 (Sanyo Electric Co.,Ltd.) VHF to UHF Low-Noise Wide-Band Amplifier Applications PDF資料下載
參數資料
| 型號： | 2SC5489 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | VHF to UHF Low-Noise Wide-Band Amplifier Applications |
| 中文描述： | 甚高頻到超高頻低噪聲寬帶放大器應用 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 31K |
| 代理商： | 2SC5489 |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
VHF to UHF Low-Noise Wide-Band
Amplifier Applications
Ordering number:ENN6339
2SC5489
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
13100TS (KOTO) TA-2600 No.6339–1/3
0
0.25
0.2
1.4
0.45
1
3
2
0
1
0
0
0.1
Specifications
Absolute Maximum Ratings
at Ta = 25C
Package Dimensions
unit:mm
2159
[2SC5489]
Features
· Low noise : NF=1.2dB typ (f=1GHz).
· High gain :
S21e
2
=13dB typ (f=1GHz).
· High cutoff frequency : f
T
=9.0GHz typ.
· Ultrasmall, slim flat-lead package.
(1.4mm
×
0.8mm
×
0.6mm)
C
C
Electrical Characteristics
at Ta = 25C
1 : Base
2 : Emitter
3 : Collector
SANYO : SSFP
Marking : GN
r
m
a
P
l
b
m
y
S
s
n
o
n
o
C
s
g
n
R
t
U
e
g
a
V
V
a
V
t
e
C
o
p
s
D
e
s
r
m
e
s
a
B
E
a
-
e
C
-
e
C
-
m
E
r
e
C
r
e
C
V
V
V
O
O
O
B
E
B
C
C
E
IC
PC
j
g
T
6
8
1
V
V
V
e
g
a
e
g
B
5
5
0
1
5
1
5
1
+
0
0
0
0
A
W
m
m
n
e
p
e
p
m
m
e
e
T
T
n
e
o
n
a
S
u
J
g
o
5
5
–
r
m
a
P
l
b
m
y
S
s
n
o
n
o
C
s
g
n
R
y
t
U
n
m
p
x
a
0
1
0
2
m
t
e
C
e
C
n
G
P
h
w
a
a
p
f
C
f
C
t
e
C
d
n
a
B
-
G
C
t
p
O
r
r
m
C
D
e
C
E
I
I
O
O
B
B
F
fT
o
C
E
hE
VB
C
VB
E
VE
C
VE
C
VB
C
VE
C
VE
C
I
V
I
V
I
V
5
I
V
5
=
0
1
=
I
V
5
=
0
1
1
=
=
=
E0
=
C0
=
C
=
C
=
1
=
V
A
A
μ
μ
t
0
0
A
A
z
A
m
m
H
m
5
5
M
5
1
1
1
0
9
t
u
d
o
e
c
0
6
1
2
z
H
F
p
B
d
B
d
G
n
a
b
C
1
n
G
r
n
a
T
e
d
w
e
s
N
r
F
|
e
1
F
2
N
S
|
2
C
z
H
G
1
=
=
0
1
3
g
I
V
5
=
C
z
H
G
1
=
A
m
5
=
5
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC5490 | UHF to S Band Low-Noise Amplifier Applications |
| 2SC5497 | NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| 2SC5501 | VHF to UHF Low-Noise Wide-Band Amplifier Applications |
| 2SC5502 | High-Frequency Low-Noise Amplifier Applications |
| 2SC5505 | Silicon NPN epitaxial planar type |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC5490A-TL-H | 功能描述:兩極晶體管 - BJT BIP NPN 30MA 10V FT=8G RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5501A-4-TR-E | 功能描述:兩極晶體管 - BJT MEDIUM OUTPUT AMPLIFIER RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5507-T2-A | 制造商:Renesas Electronics Corporation 功能描述:Cut Tape |
| 2SC5507-T2-A-FB | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5508-A | 功能描述:RF TRANSISTOR NPN SOT-343F 制造商:cel 系列:- 包裝:剪帶 零件狀態:有效 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:3.3V 頻率 - 躍遷:25GHz 噪聲系數（dB，不同 f 時的典型值）:1.1dB @ 2GHz 增益:19dB 功率 - 最大值:115mW 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:50 @ 5mA，2V 電流 - 集電極（Ic）（最大值）:35mA 安裝類型:表面貼裝 封裝/外殼:SOT-343F 供應商器件封裝:- 標準包裝:1 |
發布緊急采購，3分鐘左右您將得到回復。