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參數(shù)資料
| 型號： | 2SC5507 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | X BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | M04, 4 PIN |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 74K |
| 代理商： | 2SC5507 |
NE661M04
NPN SILICON HIGH
FREQUENCY TRANSISTOR
HIGH GAIN BANDWIDTH: fT = 25 GHz
HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz
LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz
HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz
NEW LOW PROFILE M04 PACKAGE:
SOT-343 footprint, with a height of just 0.59 mm.
Flat Lead Style for better RF performance.
FEATURES
PART NUMBER
NE661M04
EIAJ1 REGISTERED NUMBER
2SC5507
PACKAGE OUTLINE
M04
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
ICBO
Collector Cutoff Current at VCE = 5 V, IE = 0
A
0.1
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
A
0.1
hFE
Forward Current Gain2 at VCE = 2 V, IC = 5 mA
50
70
100
fT
Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz
GHz
20
25
MSG
Maximum Stable Gain4 at VCE = 2 V, IC = 5 mA, f = 2 GHz
dB
22
|S21E|2
Insertion Power Gain at VCE = 2 V, IC = 5 mA, f = 2 GHz
dB
14
17
NF
Noise Figure at VCE = 2 V, IC = 2 mA, f = 2 GHz, ZIN = ZOPT
dB
1.2
1.5
P1dB
Output Power at 1 dB compression point at
VCE = 2 V, IC = 5 mA, f = 2 GHz
dBm
5
IP3
Third Order Intercept Point at VCE = 2 V, IC = 5 mA, f = 2 GHz
dBm
15
Cre
Feedback Capacitance3 at VCB = 2 V, IC = 0, f = 1 MHz
pF
0.08
0.12
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 s, duty cycle ≤ 2 %.
3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.
4. MSG =
California Eastern Laboratories
M04
DC
RF
S21
S12
The NE661M04 is fabricated using NEC's UHS0 25 GHz fT
wafer process. With a typical transition frequency of 25 GHz
the NE661M04 is usable in applications from 100 MHz to 10
GHz. The NE661M04 provides excellent low voltage/low cur-
rent performance.
NEC's new low profile/flat lead style "M04" package is ideal for
today's portable wireless applications. The NE661M04 is an
ideal choice for LNA and oscillator requirements in all mobile
communication systems.
DESCRIPTION
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5507-T2-A | 制造商:Renesas Electronics Corporation 功能描述:Cut Tape |
| 2SC5507-T2-A-FB | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5508-A | 功能描述:RF TRANSISTOR NPN SOT-343F 制造商:cel 系列:- 包裝:剪帶 零件狀態(tài):有效 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:3.3V 頻率 - 躍遷:25GHz 噪聲系數(shù)（dB，不同 f 時的典型值）:1.1dB @ 2GHz 增益:19dB 功率 - 最大值:115mW 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:50 @ 5mA，2V 電流 - 集電極（Ic）（最大值）:35mA 安裝類型:表面貼裝 封裝/外殼:SOT-343F 供應商器件封裝:- 標準包裝:1 |
| 2SC5508-T2-A | 制造商:Renesas Electronics 功能描述:Trans GP BJT NPN 3.3V 0.035A 4-Pin Thin-Type Super Mini-Mold T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT 制造商:Renesas Electronics Corporation 功能描述:RF Transistor, NPN,3.3V,35mA,S-MiniMold4 制造商:Renesas 功能描述:Trans GP BJT NPN 3.3V 0.035A 4-Pin Thin-Type Super Mini-Mold T/R |
| 2SC5508-T2-A(FB) | 制造商:Renesas Electronics 功能描述:NPN |
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