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參數資料
| 型號： | 2SC5517 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion mesa type(For horizontal deflection output) |
| 中文描述： | 6 A, NPN, Si, POWER TRANSISTOR |
| 封裝： | TOP3E, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 35K |
| 代理商： | 2SC5517 |
1
Power Transistors
2SC5517
Silicon NPN triple diffusion mesa type
For horizontal deflection output
I
Features
G
High breakdown voltage, and high reliability through the use of a
glass passivation layer
G
High-speed switching
G
Wide area of safe operation (ASO)
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
1700
1700
5
12
6
3
40
3
150
–55 to +150
Unit
V
V
V
A
A
A
W
C
C
T
C
=25
°
C
Ta=25
°
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
Diode forward voltage
Symbol
I
CBO
V
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
V
F
Conditions
V
CB
= 1000V, I
E
= 0
V
CB
= 1700V, I
E
= 0
I
E
= 500mA, I
C
= 0
V
CE
= 5V, I
C
= 4.5A
I
C
= 4.5A, I
B
= 0.9A
I
C
= 4.5A, I
B
= 0.9A
V
CE
= 10V, I
C
= 0.1A, f = 0.5MHz
I
C
= 4.5A, I
B1
= 0.9A, I
B2
= –1.8A
I
F
= 4.5A
min
5
5
typ
3
max
50
1
10
3
1.5
5.0
0.5
–2
Unit
μ
A
mA
V
V
V
MHz
μ
s
μ
s
V
Unit: mm
1:Base
2:Collector
3:Emitter
TOP–3E Full Pack Package
15.5
±
0.5
2
±
0
2
±
0
2
1
±
0
3
±
0
5
±
0
2
0
±
0
2
2
1
3.0
±
0.3
φ
3.2
±
0.1
4
5.45
±
0.3
1
2
3
5.45
±
0.3
1.1
±
0.1
2.0
±
0.2
4.0
5
°
5
°
5
°
5
°
5
°
5
°
0.7
±
0.1
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC5517000LK | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC5521 | 制造商:JVC Worldwide 功能描述:TRANSISTOR |
| 2SC5536A-TL-H | 功能描述:兩極晶體管 - BJT BIP NPN 50MA 12V FT=1.7G RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5548(Q) | 制造商:Toshiba 功能描述:NPN 370V 2A 50 to 120 PW-Mold |
| 2SC5548A(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 400V 2A 3-Pin(2+Tab) PW-Mold |
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