- 您現在的位置：買賣IC網 > PDF目錄371518 > 2SC5546 (PANASONIC CORP) Silicon NPN triple diffusion mesa type(For horizontal deflection output) PDF資料下載
參數資料
| 型號： | 2SC5546 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion mesa type(For horizontal deflection output) |
| 中文描述： | 18 A, 600 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | SC-94, TOP-3E-A1, 3 PIN |
| 文件頁數： | 1/1頁 |
| 文件大小： | 37K |
| 代理商： | 2SC5546 |
Power Transistors
2SC5546
Silicon NPN triple diffusion mesa type
1
For horizontal deflection output
I
Features
High breakdown voltage, and high reliability through the use of a
glass passivation layer
High-speed switching
Wide area of safe operation (ASO)
I
Absolute Maximum Ratings
T
C
=
25
°
C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
V
CES
1 700
V
Collector to emitter voltage
1 700
V
V
CEO
V
EBO
I
CP
600
V
Emitter to base voltage
7
V
Peak collector current
30
A
Collector current
I
C
I
B
P
C
18
8
A
Base current
A
Collector power
dissipation
T
C
=
25
°
C
T
a
=
25
°
C
70
W
3.5
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
I
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CB
=
1 000 V, I
E
=
0
V
CB
=
1 700 V, I
E
=
0
V
EB
=
7 V, I
C
=
0
V
CE
=
5 V, I
C
=
10 A
I
C
=
10 A, I
B
=
2.5 A
I
C
=
10 A, I
B
=
2.5 A
V
CE
=
10 V, I
C
=
0.1 A, f
=
0.5 MHz
I
C
=
10 A, Resistance loaded
I
B1
=
2.5 A, I
B2
=
5.0 A
50
μ
A
1
mA
Emitter cutoff current
I
EBO
h
FE
50
μ
A
Forward current transfer ratio
6
12
Collector to emitter saturation voltage
V
CE(sat)
V
BE(sat)
f
T
3
V
Base to emitter saturation voltage
1.5
V
Transition frequency
3
MHz
Storage time
t
stg
t
f
3.0
μ
s
μ
s
Fall time
0.2
15.5
±0.5
3.0
±0.3
5
°
(4.0)
2.0
±0.2
1.1
±0.1
5.45
±0.3
0.7
±0.1
5
°
5
°
5
°
5
°
10.9
±0.5
1
5
°
2
3
(
(
(
S
3
±
5
±
(
2
±
(
2
±
1
±
(
φ
3.2
±0.1
(
1: Base
2: Collector
3: Emitter
TOP-3E Package
Internal Connection
B
C
E
Marking Symbol: C5546
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC5548A | NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER APPLICATIONS) |
| 2SC5548 | NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER APPLICATIONS) |
| 2SC5549 | NPN TRIPLE DIFFUSED TYPE (HIGH SPEED SWITCHING APPLICATIONS FOR INVERTER LIGHTING SYSTEM) |
| 2SC5550 | NPN TRIPLE DIFFUSED TYPE (HIGH SPEED SWITCHING APPLICATION FOR INVERTER LIGHTING SYSTEM) |
| 2SC5552 | Silicon NPN triple diffusion mesa type(For horizontal deflection output) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC5548(Q) | 制造商:Toshiba 功能描述:NPN 370V 2A 50 to 120 PW-Mold |
| 2SC5548A(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 400V 2A 3-Pin(2+Tab) PW-Mold |
| 2SC5548A(TE16L1,NQ | 制造商:Toshiba 功能描述:NPN 制造商:Toshiba America Electronic Components 功能描述:Transistor NPN 400V 2A for SMPS PW-Mold |
| 2SC5549(TPE6,F) | 制造商:Toshiba 功能描述:NPN 制造商:Toshiba 功能描述:NPN Cut Tape |
| 2SC5549,T6F(J | 功能描述:TRANS NPN 1A 400V TO226-3 制造商:toshiba semiconductor and storage 系列:- 包裝:散裝 零件狀態:停產 晶體管類型:NPN 電流 - 集電極（Ic）（最大值）:1A 電壓 - 集射極擊穿（最大值）:400V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:1V @ 25mA，200mA 電流 - 集電極截止（最大值）:100μA（ICBO） 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:20 @ 40mA，5V 功率 - 最大值:900mW 頻率 - 躍遷:- 工作溫度:150°C（TJ） 安裝類型:通孔 封裝/外殼:TO-226-3，TO-92-3 長體 供應商器件封裝:TO-92MOD 標準包裝:1 |
發布緊急采購，3分鐘左右您將得到回復。