- 您現在的位置：買賣IC網 > PDF目錄55791 > 2SC5566 (SANYO SEMICONDUCTOR CO LTD) 4 A, 50 V, NPN, Si, POWER TRANSISTOR PDF資料下載
參數資料
| 型號： | 2SC5566 |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 50 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PCP, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 41K |
| 代理商： | 2SC5566 |
2SA2013 / 2SC5566
No.6307-1/5
Applications
Relay drivers, lamp drivers, motor drivers, flash.
Features
Adoption of FBET and MBIT processes.
High current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Ultrasmall package facilitales miniaturization in end products.
High allowable power dissipation.
Specifications ( ) : 2SA2013
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--50)100
V
Collector-to-Emitter Voltage
VCES
(--50)100
V
Collector-to-Emitter Voltage
VCEO
(--)50
V
Emitter-to-Base Voltage
VEBO
(--)6
V
Collector Current
IC
(--)4
A
Collector Current (Pulse)
ICP
(--)7
A
Base Current
IB
(--)600
mA
Collector Dissipation
PC
Mounted on a ceramic board (250mm2!0.8mm)
1.3
W
Tc=25
°C
3.5
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)40V, IE=0A
(--)1
A
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)1
A
DC Current Gain
hFE
VCE=(--)2V, IC=(--)500mA
200
560
Gain-Bandwidth Product
fT
VCE=(--)10V, IC=(--)500mA
(360)400
MHz
Marking : 2SA2013 : AT 2SC5566 : FC
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6307B
62405EA MS IM TB-00001405 / 52501 TS KT TA-3260
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
2SA2013 / 2SC5566
PNP / NPN Epitaxial Planar Silicon Transistors
DC / DC Converter Applications
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC5593 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5650 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5703 | 4000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC5776 | 8 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 2SC5827 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC5566-TD-E | 功能描述:兩極晶體管 - BJT BIP NPN 4A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5569-TD-E | 功能描述:兩極晶體管 - BJT BIP NPN 7A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5570(Q) | 制造商:Toshiba 功能描述:NPN Cut Tape |
| 2SC5584 | 制造商:Distributed By MCM 功能描述:1500V 20A 150W Bce Matsushita Transistor Top-3L |
| 2SC5585TL | 功能描述:兩極晶體管 - BJT NPN 12V 0.5A SOT-416 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發布緊急采購，3分鐘左右您將得到回復。