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參數資料
| 型號： | 2SC5583 |
| 廠商： | Panasonic Corporation |
| 英文描述： | Silicon NPN triple diffusion mesa type(For horizontal deflection output) |
| 中文描述： | 硅npn型三重擴散（水平偏轉輸出臺地型） |
| 文件頁數： | 1/1頁 |
| 文件大小： | 46K |
| 代理商： | 2SC5583 |
Power Transistors
2SC5583
Silicon NPN triple diffusion mesa type
1
For horizontal deflection output
I
Features
High breakdown voltage, and high reliability through the use of a
glass passivation layer
High-speed switching
Wide area of safe operation (ASO)
I
Absolute Maximum Ratings
T
C
=
25
°
C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
V
CES
1 500
V
Collector to emitter voltage
1 500
V
V
CEO
V
EBO
I
CP
600
V
Emitter to base voltage
7
V
Peak collector current
30
A
Collector current
I
C
I
B
P
C
17
8
A
Base current
A
Collector power
dissipation
T
C
=
25
°
C
T
a
=
25
°
C
150
W
3
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
I
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CB
=
1 000 V, I
E
=
0
V
CB
=
1 500 V, I
E
=
0
V
EB
=
7 V, I
C
=
0
V
CE
=
5 V, I
C
=
8.5 A
I
C
=
8.5 A, I
B
=
2.13 A
I
C
=
8.5 A, I
B
=
2.13 A
V
CE
=
10 V, I
C
=
0.1 A, f
=
0.5 MHz
I
C
=
8.5 A, Resistance loaded
I
B1
=
2.13 A, I
B2
=
4.25 A
50
μ
A
1
mA
Emitter cutoff current
I
EBO
h
FE
50
μ
A
Forward current transfer ratio
6
12
Collector to emitter saturation voltage
V
CE(sat)
V
BE(sat)
f
T
3
V
Base to emitter saturation voltage
1.5
V
Transition frequency
3
MHz
Storage time
t
stg
t
f
2.7
μ
s
μ
s
Fall time
0.2
20.0
±
0.5
2.0
±
0.3
3.0
±
0.3
1.0
±
0.2
5.45
±
0.3
10.9
±
0.5
1
2
3
2
±
0
(
(
S
(
(
(
(
(1.5)
2
±
0
5.0
±
0.3
(3.0)
φ
3.3
±
0.2
(1.5)
2.7
±
0.3
0.6
±
0.2
(
(
1: Base
2: Collector
3: Emitter
TOP-3L Package
Internal Connection
B
C
E
Marking Symbol: C5583
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相關代理商/技術參數 |
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|---|---|
| 2SC5584 | 制造商:Distributed By MCM 功能描述:1500V 20A 150W Bce Matsushita Transistor Top-3L |
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| 2SC5587(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC5588 | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 800V 15A 3-Pin(3+Tab) TO-3P(HIS) 制造商:Distributed By MCM 功能描述:1700V 15A 75W Bce Toshiba Transistor 2-16E3A |
| 2SC5588(Q,M) | 功能描述:兩極晶體管 - BJT Transistor NPN 1700V 15A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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