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參數(shù)資料
| 型號： | 2SC5599-FB |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | ULTRA SUPER MINIMOLD PACKAGE-3 |
| 文件頁數(shù)： | 1/24頁 |
| 文件大?。?/td> | 101K |
| 代理商： | 2SC5599-FB |
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15145EJ1V0DS00 (1st edition)
Date Published November 2000 NS CP(K)
Printed in Japan
2000
NPN SILICON RF TRANSISTOR
2SC5599
NPN SILICON RF TRANSISTOR FOR
LOW NOISE HIGH-GAIN AMPLIFICATION
3-PIN ULTRA SUPER MINIMOLD
FEATURES
Low voltage operation, low phase distortion
Ideal for OSC applications
3-pin ultra super minimold package(t = 0.75 mm)
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC5599
50 pcs (Non reel)
8 mm wide embossed taping
2SC5599-T1
3 kpcs/reel
Pin 3 (collector) face the perforation side of the tape
Remark To order evaluation samples, consult your NEC sales representative (Unit sample quantity is 50 pcs).
ABSOLUTE MAXIMUM RATINGS (TA = +25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
9V
Collector to Emitter Voltage
VCEO
5.5
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
100
mA
Total Power Dissipation
Ptot
Note
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
65 to +150
°C
Note Mounted on 1.08 cm
2
× 1.0 mm (t) glass epoxy substrate
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
相關PDF資料 |
PDF描述 |
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| 2SC5614-T3FB | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5614-FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5614 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5614-EB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5615-A | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5606-A | 功能描述:RF TRANSISTOR NPN SOT-523 制造商:cel 系列:- 包裝:剪帶 零件狀態(tài):有效 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:3.3V 頻率 - 躍遷:21GHz 噪聲系數(shù)（dB，不同 f 時的典型值）:1.2dB @ 2GHz 增益:12.5dB 功率 - 最大值:115mW 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:60 @ 5mA，2V 電流 - 集電極（Ic）（最大值）:35mA 安裝類型:表面貼裝 封裝/外殼:SOT-523 供應商器件封裝:- 標準包裝:1 |
| 2SC5606-FB-A | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5606-T1-A | 功能描述:RF TRANSISTOR NPN SOT-523 制造商:cel 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:3.3V 頻率 - 躍遷:21GHz 噪聲系數(shù)（dB，不同 f 時的典型值）:1.2dB @ 2GHz 增益:14dB 功率 - 最大值:115mW 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:60 @ 5mA，2V 電流 - 集電極（Ic）（最大值）:35mA 安裝類型:表面貼裝 封裝/外殼:SOT-523 供應商器件封裝:SOT-523 標準包裝:1 |
| 2SC5606-T1-A-FB | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5611 | 制造商:Sony Semiconductor Solutions Division 功能描述: |
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