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參數資料
型號: 2SC5603-T1
英文描述: TRANSISTOR | BJT | NPN | 6V V(BR)CEO | 35MA I(C) | SOT-416VAR
中文描述: 晶體管|晶體管|叩| 6V的五(巴西)總裁| 35MA一(c)|的SOT - 416VAR
文件頁數: 1/4頁
文件大?。?/td> 42K
代理商: 2SC5603-T1
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Ordering number:ENN6465
2SC5637
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71700TS (KOTO) TA-2594 No.6465–1/4
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2174
[2SC5637]
Features
High speed (tf=100ns typ).
High breakdown voltage (VCBO=1500V).
High reliability (Adoption of HVP process).
Adoption of MBIT process.
C
Electrical Characteristics at Ta = 25C
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
Tc=25C
Continued on next page.
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相關代理商/技術參數
參數描述
2SC5606-A 功能描述:RF TRANSISTOR NPN SOT-523 制造商:cel 系列:- 包裝:剪帶 零件狀態:有效 晶體管類型:NPN 電壓 - 集射極擊穿(最大值):3.3V 頻率 - 躍遷:21GHz 噪聲系數(dB,不同 f 時的典型值):1.2dB @ 2GHz 增益:12.5dB 功率 - 最大值:115mW 不同?Ic,Vce?時的 DC 電流增益(hFE)(最小值):60 @ 5mA,2V 電流 - 集電極(Ic)(最大值):35mA 安裝類型:表面貼裝 封裝/外殼:SOT-523 供應商器件封裝:- 標準包裝:1
2SC5606-FB-A 制造商:Renesas Electronics Corporation 功能描述:
2SC5606-T1-A 功能描述:RF TRANSISTOR NPN SOT-523 制造商:cel 系列:- 包裝:剪切帶(CT) 零件狀態:有效 晶體管類型:NPN 電壓 - 集射極擊穿(最大值):3.3V 頻率 - 躍遷:21GHz 噪聲系數(dB,不同 f 時的典型值):1.2dB @ 2GHz 增益:14dB 功率 - 最大值:115mW 不同?Ic,Vce?時的 DC 電流增益(hFE)(最小值):60 @ 5mA,2V 電流 - 集電極(Ic)(最大值):35mA 安裝類型:表面貼裝 封裝/外殼:SOT-523 供應商器件封裝:SOT-523 標準包裝:1
2SC5606-T1-A-FB 制造商:Renesas Electronics Corporation 功能描述:
2SC5611 制造商:Sony Semiconductor Solutions Division 功能描述:
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