- 您現在的位置：買賣IC網 > PDF目錄351954 > 2SC5617FB Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay PDF資料下載
參數資料
| 型號： | 2SC5617FB |
| 英文描述： | Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay |
| 中文描述： | 晶體管|晶體管|叩| 6V的五（巴西）總裁| 30mA的一（c）|的SOT - 416VAR |
| 文件頁數： | 1/4頁 |
| 文件大小： | 42K |
| 代理商： | 2SC5617FB |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Ordering number:ENN6465
2SC5637
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71700TS (KOTO) TA-2594 No.6465–1/4
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2174
[2SC5637]
Features
High speed (tf=100ns typ).
High breakdown voltage (VCBO=1500V).
High reliability (Adoption of HVP process).
Adoption of MBIT process.
C
Electrical Characteristics at Ta = 25C
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
Tc=25C
Continued on next page.
16.0
3.4
12
3
21.0
5.0
22.0
0.8
20.4
4.0
2.0
2.8
2.1
5.45
0.7
0.9
3.5
0.8
5.6
3.1
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
Cs
g
n
i
t
a
Rt
i
n
U
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
o
t
c
e
ll
o
CV
O
B
C
0
5
1V
e
g
a
t
l
o
V
r
e
t
i
m
E
-
o
t
-
r
o
t
c
e
ll
o
CV
O
E
C
0
8V
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
e
t
i
m
EV
O
B
E
6V
t
n
e
r
u
C
r
o
t
c
e
ll
o
CIC
0
1A
)
e
s
l
u
P
(
t
n
e
r
u
C
r
o
t
c
e
ll
o
CI P
C
5
2A
n
o
i
t
a
p
i
s
i
D
r
o
t
c
e
ll
o
CPC
0
.
3W
5
8W
e
r
u
t
a
r
e
p
m
e
T
n
o
i
t
c
n
u
Jj
T
0
5
1
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
Sg
t
s
T
0
5
1
+
o
t
5
–
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
C
s
g
n
i
t
a
R
t
i
n
U
n
i
mp
y
tx
a
m
t
n
e
r
u
C
f
o
t
u
C
r
o
t
c
e
ll
o
C
I
O
B
C
V B
C
I
,
V
0
8
=
E 0
=0
1A
t
n
e
r
u
C
f
o
t
u
C
r
o
t
c
e
ll
o
C
I
S
E
C
V E
C
R
,
V
0
5
1
=
E
B
0
=0
.
1A
m
e
g
a
t
l
o
V
n
i
a
t
s
u
S
r
e
t
i
m
E
-
o
t
-
r
o
t
c
e
ll
o
CV
)
s
u
s
(
O
E
C
IC
I
,
A
m
0
1
=
B 0
=0
0
8V
t
n
e
r
u
C
f
o
t
u
C
r
e
t
i
m
EI
O
B
E
V B
E
I
,
V
4
=
C 0
=0
.
1A
m
e
g
a
t
l
o
V
n
o
i
t
a
r
u
t
a
S
r
e
t
i
m
E
-
o
t
-
r
o
t
c
e
ll
o
CV E
C
)
t
a
s
(IC
I
,
A
8
=
B
A
2
=
5V
e
g
a
t
l
o
V
n
o
i
t
a
r
u
t
a
S
r
e
t
i
m
E
-
o
t
-
e
s
a
BV E
B
)
t
a
s
(IC
I
,
A
8
=
B
A
2
=5
.
1V
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC5617FB-T3 | TRANSISTOR | BJT | NPN | 6V V(BR)CEO | 30MA I(C) | SOT-416VAR |
| 2SC5618(NE687M13) | Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay |
| 2SC5618EB | TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-416VAR |
| 2SC5618EB-T3 | Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay |
| 2SC5618FB | TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-416VAR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC562 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC562200VLA | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR |
| 2SC562200VLK | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC563200L | 功能描述:TRANS NPN 8VCEO 50MA S-MINI 3P RoHS:否 類別:分離式半導體產品 >> RF 晶體管 (BJT) 系列:- 產品變化通告:Product Discontinuation 17/Dec/2010 標準包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發射極擊穿（最大）:4.7V 頻率 - 轉換:47GHz 噪聲系數（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應商設備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
| 2SC5632G0L | 功能描述:TRANS NPN 8VCEO 50MA SMINI-3 RoHS:是 類別:分離式半導體產品 >> RF 晶體管 (BJT) 系列:- 產品變化通告:Product Discontinuation 17/Dec/2010 標準包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發射極擊穿（最大）:4.7V 頻率 - 轉換:47GHz 噪聲系數（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應商設備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
發布緊急采購，3分鐘左右您將得到回復。