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參數資料
| 型號： | 2SC5656 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁數： | 1/24頁 |
| 文件大小： | 94K |
| 代理商： | 2SC5656 |
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15248EJ1V0DS00 (1st edition)
Date Published December 2000 NS CP(K)
Printed in Japan
2000
NPN SILICON RF TRANSISTOR
2SC5656
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW NOISE
3-PIN NON-LEAD MINIMOLD
FEATURES
1006 package employed (1.0
× 0.6 × 0.5 mm)
NF = 1.3 dB TYP.,
S21e2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC5656
50 pcs (Non reel)
8 mm wide paper carrier taping
2SC5656-T1
10 kpcs/reel
Pin 3 (collector) face the perforation side of the tape
Remark To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
15
V
Collector to Emitter Voltage
VCEO
6V
Emitter to Base Voltage
VEBO
2V
Collector Current
IC
35
mA
Total Power Dissipation
Ptot
Note
150
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
65 to +150
°C
Note Mounted on 1.08 cm
2
× 1.0 mm (t) glass epoxy substrate
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
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| 2SC5658 | 制造商:ROHM Semiconductor 功能描述:150 MA, 50 V, NPN, SI, SMALL SIGNAL TRANSISTOR, VMT3, 3 PIN |
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| 2SC5658M3T5G | 功能描述:兩極晶體管 - BJT 100mA 50V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5658RM3T5G | 功能描述:兩極晶體管 - BJT SS GENERAL PURPOSE NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5658T2L | 制造商:ROHM Semiconductor 功能描述: 制造商:ROHM Semiconductor 功能描述:150 MA, 50 V, NPN, SI, SMALL SIGNAL TRANSISTOR, VMT3, 3 PIN |
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