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參數資料
| 型號： | 2SC5663 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Low frequency transistor (12V, 0.5A) |
| 中文描述： | 低頻晶體管（12V的，0.5A的） |
| 文件頁數： | 1/3頁 |
| 文件大小： | 69K |
| 代理商： | 2SC5663 |
2SC5585 / 2SC5663
Transistors
Low frequency transistor (12V, 0.5A)
Rev.B
1/2
2SC5585 / 2SC5663
The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.
z
Applications
For switching
For muting
z
Features
1) High current.
2) Low V
CE(sat)
.
V
CE(sat)
≤
250mV at I
C
= 200mA / I
B
= 10mA
z
Absolute maximum ratings
(Ta=25
°
C)
z
External dimensions
(Unit : mm)
ROHM : EMT3
EIAJ : SC-75A
2SC5585
Abbreviated symbol : BX
Abbreviated symbol : BX
ROHM : VMT3
2SC5663
(1) Base
(2) Emitter
(3) Collector
(1) Emitter
(2) Base
(3) Collector
0
0
0.1Min.
0
0
0
1.6
1
1
0
0.8
(2)
0
(3)
0
(1)
0
(3)
0
0
1
0
0
0
1.2
0.8
0.2
0.15Max.
0.2
(2)
(1)
Parameter
Collectot-base voltage
Collector-emitter voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
CBO
V
CEO
I
C
P
C
Tj
Tstg
15
V
V
mA
mW
°
C
°
C
12
Emitter-base voltage
V
EBO
V
6
500
I
CP
A
1
150
150
55 to +150
Symbol
Limits
Unit
Single pulse Pw = 1ms
z
Electrical characteristics
(Ta=25
°
C)
Parameter
Collector-base breakdown voltage
Collectoe-emitter brakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
V
CE
(sat)
Cob
Min.
15
12
6
270
90
7.5
100
680
250
V
I
C
= 10
μ
A
I
C
= 1mA
I
E
= 10
μ
A
V
CB
= 15V
V
CE
= 2V, I
C
= 10mA
I
C
= 200mA, I
B
= 10mA
V
CB
= 10V, I
E
= 0A, f = 1MHz
V
V
nA
Emitter cutoff current
I
EBO
100
V
CB
= 6V
nA
mV
f
T
320
V
CE
= 2V, I
E
=
10mA, f = 100MHz
MHz
pF
Typ.
Max.
Unit
Conditions
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