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參數(shù)資料
| 型號： | 2SC5696 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 12 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-3PMLH, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 31K |
| 代理商： | 2SC5696 |
2SC5696
No.6663-1/4
Features
High speed.
High breakdown voltage(VCBO=1600V).
High reliability(Adoption of HVP process).
Adoption of MBIT process.
On-chip damper diode.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
1600
V
Collector-to-Emitter Voltage
VCEO
800
V
Emitter-to-Base Voltage
VEBO
5V
Collector Current
IC
12
A
Collector Current (Pulse)
ICP
36
A
Collector Dissipation
PC
3.0
W
Tc=25
°C85
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=800V, IE=0
10
A
Collector Cutoff Current
ICES
VCE=1600V, RBE=0
1.0
mA
Collector Sustain Voltage
VCEO(sus)
IC=100mA, IB=0
800
V
Emitter Cutoff Current
IEBO
VEB=4V, IC=0
80
800
mA
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6663C
2SC5696
Color TV Horizontal Deflection
Output Applications
Package Dimensions
unit : mm
2174A
[2SC5696]
52003 TS IM TA-100444 / 42501 TS IM TA-3261 / 82200 TS IM TA-2994
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
21.0
5.0
22.0
0.8
20.4
4.0
16.0
3.4
2.0
2.8
2.1
5.45
0.7
0.9
3.5
8.0
5.6
3.1
12
3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5700 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5703(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC5706-E | 功能描述:兩極晶體管 - BJT BIP NPN 5A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5706-H | 功能描述:兩極晶體管 - BJT BIP NPN 5A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5706-P-E | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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