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參數資料
| 型號： | 2SC5741 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN silicon RF transistor for high-frequency low noise 3-pin ultra super minimold |
| 中文描述： | NPN硅射頻晶體管高頻低噪聲3針超迷你模具 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 63K |
| 代理商： | 2SC5741 |
NE662M16
NPN SILICON HIGH
FREQUENCY TRANSISTOR
M16
HIGH GAIN BANDWIDTH: fT = 25 GHz
LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz
HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz
NEW LOW PROFILE M16 PACKAGE:
Flat Lead Style with a height of just 0.50mm
FEATURES
DESCRIPTION
The NE662M16 is fabricated using NEC's UHS0 25 GHz fT
wafer process. With a typical transition frequency of 25 GHz
the NE662M16 is usable in applications from 100 MHz to over
10 GHz. The NE662M16 provides excellent low voltage/low
current performance.
NEC's new low profile/flat lead style "M16" package is ideal for
today's portable wireless applications. The NE662M16 is an
ideal choice for LNA and oscillator requirements in all mobile
communication systems.
PART NUMBER
NE662M16
EIAJ1 REGISTERED NUMBER
2SC5704
PACKAGE OUTLINE
M16
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
ICBO
Collector Cutoff Current at VCB = 5V, IE = 0
nA
200
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
nA
200
hFE
Forward Current Gain2 at VCE = 2 V, IC = 5 mA
50
70
100
fT
Gain Bandwidth at VCE = 3 V, IC = 30 mA, f = 2 GHz
GHz
20
25
MSG
Maximum Stable Gain4 at VCE = 2 V, IC = 20 mA, f = 2 GHz
dB
20
|S21E|2
Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz
dB
14
17
NF
Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZIN = ZOPT
dB
1.1
1.5
P1dB
Output Power at 1 dB compression point at
VCE = 2 V, IC = 20 mA, f = 2 GHz
dBm
11
IP3
Third Order Intercept Point at VCE = 2 V, IC = 20 mA, f = 2 GHz
22
Cre
Feedback Capacitance3 at VCB = 2 V, IC = 0, f = 1 MHz
pF
0.14
0.24
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 s, duty cycle ≤ 2 %.
3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.
4. MSG =
DC
RF
S21
S12
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相關代理商/技術參數 |
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| 2SC5748(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 900V 16A 3-Pin TO-3P(LH) |
| 2SC5750-A | 功能描述:RF TRANSISTOR NPN SOT-343 制造商:cel 系列:- 包裝:剪帶 零件狀態:有效 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:6V 頻率 - 躍遷:15GHz 噪聲系數（dB，不同 f 時的典型值）:1.7dB @ 2GHz 增益:15dB 功率 - 最大值:200mW 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:75 @ 20mA，3V 電流 - 集電極（Ic）（最大值）:50mA 安裝類型:表面貼裝 封裝/外殼:SC-82A，SOT-343 供應商器件封裝:- 標準包裝:1 |
| 2SC5750-T1-A | 功能描述:RF TRANSISTOR NPN SOT-343 制造商:cel 系列:- 包裝:帶卷（TR） 零件狀態:有效 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:6V 頻率 - 躍遷:15GHz 噪聲系數（dB，不同 f 時的典型值）:1.7dB @ 2GHz 增益:15dB 功率 - 最大值:200mW 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:75 @ 20mA，3V 電流 - 集電極（Ic）（最大值）:50mA 安裝類型:表面貼裝 封裝/外殼:SC-82A，SOT-343 供應商器件封裝:SOT-343 標準包裝:3,000 |
| 2SC5750-T1-A-FB | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5751-A | 功能描述:RF TRANSISTOR NPN SOT-343F 制造商:cel 系列:- 包裝:剪帶 零件狀態:有效 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:6V 頻率 - 躍遷:15GHz 噪聲系數（dB，不同 f 時的典型值）:1.7dB @ 2GHz 增益:16dB 功率 - 最大值:205mW 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:75 @ 20mA，3V 電流 - 集電極（Ic）（最大值）:50mA 安裝類型:表面貼裝 封裝/外殼:SOT-343F 供應商器件封裝:- 標準包裝:1 |
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