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參數(shù)資料
型號: 2SC5763N
廠商: SANYO SEMICONDUCTOR CO LTD
元件分類: 功率晶體管
英文描述: 7 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220
封裝: TO-220, 3 PIN
文件頁數(shù): 1/4頁
文件大小: 30K
代理商: 2SC5763N
2SC5763
No.6989-1/4
Switching Regulator Applications
Features
High breakdown voltage.
High reliability.
High-speed switching.
Wide ASO.
Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
700
V
Collector-to-Emitter Voltage
VCEO
400
V
Emitter-to-Base Voltage
VEBO
8V
Collector Current
IC
7A
Collector Current (Pulse)
ICP
PW
≤300s, Duty cycle≤10%
14
A
Collector Dissipation
PC
1.75
W
Tc=25
°C55
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=400V, IE=0
10
A
Emitter Cutoff Current
IEBO
VEB=5V, IC=0
10
A
Continued on next page.
* : The hFE1 of the 2SC5763 is classified as follows.
Rank
M
N
hFE1
20 to 40
30 to 50
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6989A
2SC5763
Package Dimensions
unit : mm
2010C
[2SC5763]
D0301 TS IM TA-3501 / 71801 TS IM TA-3234
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220
10.2
5.1
3.6
18.0
5.6
2.7
6.3
15.1
1.2
14.0
0.8
1.3
4.5
0.4
2.55
2.7
12
3
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